In advanced silicon technology, tungsten Titanium (W/Ti) alloy films are frequently used as diffusion barriers and etch-stop layers in combination with aluminium-based interconnections.The barrier films have been characterized with the help of cross-sectional transmission electron microscopy, electron diffraction, electrical resistivity probing, Rutherford back-scattering spectrometry and X-ray diffraction.
1.) Oxide sputtering target:
CeO2, Nd2O3, Sm2O3, Eu2O3, Gd2O3, Tb4O7, Dy2O3, Ho2O3, Er2O3, Tm2O3, Yb2O3, Lu2O3, Sc2O3, Y2O3, Ta2O5, Nb2O5, Ga2O3, V2O5, ZrO2 doped with Ti, WO3, WO2.9, HfO2, MgO, Al2O3, Indium Tin Oxide, ITO (In2O3-SnO2), In2O3/CaO, ZnO, Al2O3 doped ZnO (AZO), IZO (Indium Zinc Oxide, 90 wt% In2O3 / 10 wt% ZnO), Ga2O3 doped ZnO (GZO), IGZO, ZnO2/TiO2, ZnO2/ZrO2, ZnO/LiCl, La0.67Sr0.33MnO3 (LSMO), ZrO2-Y2O3 stabilized (YSZ), SnO2, Sb2O3 doped SnO2 (ATO), ZrO2+Ti, ZrO2+Zr, ZrO2+SiO2, Bi2O3, Cr2O3, MoO, MoO3, NiO, SiO, Cr-SiO, SiO2, TiO, TiO2, VO2, V2O5, TiO2-Nb2O5, Ti2O3, Ti3O5, CuO/Al2O3, Sb2O3, BaO, BaTiO3, CaO, Fe2O3, Fe3O4, PbO, PbTiO3, PbZrO3, LiNbO3, SrO, SrTiO3, BaTiO3, SrZrO3, BaZrO3, SrBaTiO3, PZT (Plumbum Zirconate Titanate), LaNiO3, InGaZnO, CuInO2, LaAl2O3, CGO.
2.) (Boride, Carbide, Nitride, Fluoride, Silicide, Sulfide, Telluride, stannate) sputtering target
LaB6, ZrB2, CrB2, TiB2, HfB2, Mo2B5, TaB2, NbB2, W2B, WB, VB2
TiC, SiC, WC, WC-Co, WC-Ni, B4C, TaC, ZrC, Cr3C2, HfC, Mo2C, VC
Si3N4, AlN, BN, BN/SiC mixture, HfN, TaN, NbN, ZrN, TiN, VN
LaF3, CeF3, NdF3, YF3, NaF, KF, BaF2, AlF3, LiF, CaF2, SrF3, SrF2, MgF2
CoSi2, Mo5Si3, MoSi2, Ta5Si3, TaSi2, TaSi, WSi2, WSi, Nb5Si3, NbSi2, CrSi2, Cr3Si, HfSi2, TiSi2
Ti5Si3, ZrSi2, WSi2, VSi2, V3Si, NiSi,
CdS, ZnS, ZnS:Mn, In2S3, Sb2S3, PbS, MoS2, MoS2/Ti, MoS2/nI, SnS2, TaS2, WS2, In2S3
Zn2SnO4, Cd2SnO4, CdTe, ZnTe, Bi2Te3, In2Te3, ZnSe
3.) Metal sputtering target:
Silver, Ag, Iridium, Ir, Ruthenium, Ru, Palladium Pd, Lanthanum La, Cerium Ce, Praseodymium Pr, Neodymium Nd, Samarium Sm, Eur , Eu, Gadolinium Gd, Terbium Tb, Dysprosium Dy, Holmium Ho, Erbium Er, Thulium Tm, Ytterbium Yb, Lutetium Lu, Scandium Sc, Yttrium Y, Silicon, Si, Tellurium, Te, Bismuth, Bi, Tin, Sn, Zinc, Zn, Boron, B, Lead, Pb, Antimony, Sb, Chromium, Cr, Cobalt, Co, Aluminum, Al, Nickel, Ni, Titanium, Ti, Tungsten, W, Molybdenum, Mo, Tantalum, Ta, Niobium, Nb, Zirconium, Zr, Hafnium, Hf, Vanadium, V, Germanium, Ge, Indium In, Copper, Cu, Iron, Fe, Manganese, Mn, Magnesium, Mg, Cadmium Cd, etc.
4.) Alloy sputtering target:
Ag-Al, Ag-Cu, Ag-La, Ag-Lu, Ag-Mg, Al-Sm, Ag-Sn, Al-Ag, Al-Cr, Al-Cu, Al-Dy, Al-Er, Al-Gd, Al-Mg, Al-Mg-Si, Al-Sc, Al-Si, Al-Si-Cu, Al-Sm, Al-Ta, Al-Ti, Al-Mo, Al-Nd, Al-V, Al-Y, Al-Yb, Cd-Sn, Ce-Ag, Ce-Cu, Ce-Gd, Ce-Sm, Ce-Ti, Co-Al, Co-B, Co-Cr, Co-Cr-Al, Co-Cr-Fe, Co-Fe, Co-Fe-B, Co-Fe-Gd, Co-Gd, Co-Ni, Co-Ni-Cr, Co-Tb, Co-V, Co-Zr, Cr-Al, Cr-B, Cr-Cu, Cr-Mn, Cr-Ni, Cr-Si, Cr-V, Cu-Al, Cu-Ga, Cu-Ge, Cu-In, Cu-Ni, Cu-Zn, Dy-Fe, Dy-Co, Dy-Fe-Co, Fe-Al, Fe-B, Fe-Co, Fe-Gd, Fe-Hf, Fe-Mn, Fe-Ni, Fe-Si, Gd-Ce, Gd-Fe, Gd-Fe-Co, Gd-Er-Si, Gd-Tb, Gd-Ti, Ho-Cu, Hf-Fe, Hf-Y, In-Sb, In-Sn, In-Zn, LaB6, La-Al, La-Ni, Mg-Al, Mg-Ca, Mg-Dy, Mg-Gd, Mg-In, Mg-Nd, Mg-Nd-Zr-Y, Mg-Sc, Mg-Sm, Mg-Y, Mg-Zr, Mn-Fe, Mn-Ni, Mo-Cr, Ta-Mo, Mo-Si, Nb-Ti, Nd-Ag, Nd-Fe-B, Ni-Al, Ni-Cu, Ni-Cr, Ni-Cr-Al, Ni-Cr-Si, Ni-Fe, Ni-Mn, Ni-Ti, Ni-W, Ni-V, Ni-V-Zr, Ni-Yb, Ni2Yb, Ni3Yb, Ni-Yb, Ni-Zr, Sc-Ni, Sc-Zr, Sm-Co, Sm-Fe, Sm-Zr, Ta-Al, Ti-Al, Ti-Al-Cr, Ti-Al-Y, Ti-Al-V, Ti-Co, Ti-Cr, Ti-Ni, Ti-Si, TiSi2, Ti-Zr, Tb-Dy, Tb-Dy-Fe, Tb-Fe, Tb-Fe-Co, Tb-Gd-Fe-Co, V-Al, V-Co, V-Cr, V-Cu, V-Fe, V-Mo, V-Ni, V-Ti, Ti-Al-V, W-Ti, W-Si, Y-Ti, Y-Zr, Y-Zr-Mg, Zn-Al, Zr-Al, Zr-Ce, Zr-Cu, Zr-Gd, Zr-Si, Zr-Ti, Zr-Y, W/Re/HfC, TiAl6V4
5.) Thin film photovoltaic coating materials
Cadmium Sulfide CdS, Copper Sulphide CuS, Cadmium Telluride CdTe, Lead Telluride PbTe, Mercury Telluride HgTe, Indium Telluride In2Te3, Antimony Telluride Sb2Te3, Bismuth Telluride Bi2Te3, Gallium Telluride Ga2Te3, Tin Telluride SnTe, Zinc Telluride ZnTe, CuInGaSe, In2Se3, Ga2Se3, CuInSe2, CuInS2, Zinc Stannate (Zn2SnO4), Cadmium Stannate (Cd2SnO4), SnO2, SnCl4, ZnO, Molybdenum, Indium, ZnS, ZnSe, InSb, InAs, In2S3, CuGa, Cu2S, Cu2Se.
