| Model: | PSHI 0432 Pro |
|---|---|
| Brand: | power-sem |
| Origin: | Made In China |
| Category: | Electronics & Electricity / Electronic Components / Circuit Board |
| Label: | IGBT driver , IGBT driver core , IGBT driver circuit |
| Price: |
-
|
| Min. Order: | 1 pc |
| Last Online:28 Dec, 2017 |
●ASIC 3-level IGBT driver
●Suitable for all IGBTs up to 600V/1200V/1700V
●Used to drive the upper/lower bridge arm dual IGBT
●Integrated control signal timing management
●Short circuit and over current protection by VCEsat monitoring
● Active-clamping+dynamic spike restrian
●Isolation due to nanometer amorphous transformer
●Supply undervoltage protection (<12.5V)
●Gate voltage monitoring
●Timing time adjustable externally
●Internal isolated DC/DC power supply
●±15A peak current output
●IGBT gate drive voltage+15V/-9V
●350ns signal conversion time
●110ns error signal feedback time
●100ns narrow pulse inhibit eliminate radio frequency interference
●Max. working frequency 100kHz
●Error chain function, low level active
●Clearance distance from primary side to secondary side is 39mm
PSHI 0432
Absolute Maximum Ratings(Ta=25℃)
|
Symbol |
Term |
Values |
Unit |
|
VS MAX. |
Max. supply voltage primary |
+16 |
V |
|
IS MAX. |
Max. supply current primary |
330 |
mA |
|
PDC/DC |
Total power of DC/DC isolation power output |
4 |
W |
|
Vin |
Max. PWM input level(Vin I; Vin O) |
VS+0.7 |
V |
|
ViH |
Max. logic signal input voltage (External error signal) |
VS+0.7 |
V |
|
IOC |
Max. logic signal output currect (Open-collector output current) |
10 |
mA |
|
IoutAV |
Output average current per channel |
80 |
mA |
|
IoutPEAK |
Output peak current per channel |
±15 |
A |
|
VCES |
IGBT collector-emitter voltage PSHI 0432 PSHI 0432 Pro |
-- 1200 1700 |
V |
|
Visol IO |
Isolation voltage IN-OUT(1 minute. AC) PSHI 0432 PSHI 0432 Pro |
-- 5000 8000 |
V |
|
Visol AB |
Isolation voltage OUT A-OUT B(1 minute. AC) PSHI 0432 PSHI 0432 Pro |
-- 4000 5000 |
V |
|
RGon/off min |
Minimal Rgon/Rgoff |
1.6 |
Ω |
|
Qout/pulse |
Charge per pulse |
±10 |
μC |
|
dv/dt |
Rate of rise and fall of voltage |
75 |
kV/μs |
|
fSW max |
Max. working frequency |
100 |
kHz |
|
Top |
Operating temperature |
-40...+85 |
℃ |
|
Tstg. |
Storage temperatature |
-45...+85 |
℃ |
Electrical Characteristics(Ta=25℃)
|
Symbol |
Term |
Parameter |
Unit |
|||
|
Min. |
Typ. |
Max. |
Rec. |
|||
|
VS |
Supply voltage primary |
14.5 |
15 |
15.5 |
15 |
V |
|
IS |
No-load currect primary fSW= 0kHz fSW=20kHz fSW=50kHz |
|
-- 80 100 120 |
|
|
mA |
|
VIT+ |
Input high level: 15V level |
12 |
|
|
|
V |
|
VIT－ |
Input low level: 15V level |
|
|
4.5 |
|
V |
|
Rin |
Input resistance |
|
33 |
|
|
kΩ |
|
VG(on) |
Turn-on gate voltage |
|
+15 |
|
|
V |
|
VG(off) |
Turn-off gate voltage |
|
-9 |
|
|
V |
|
td(on)IO |
IN-OUT turn-on delay time |
|
350 |
|
|
ns |
|
td(off)IO |
IN-OUT turn-off delay time |
|
350 |
|
|
ns |
|
td(err) |
Error signal return delay time VCE error happen-error signal output |
|
110 |
|
|
ns |
|
tmd |
Narrow pulse restrained |
|
100 |
|
|
ns |
|
VCEstat |
Reference voltage for VCE monitoring VCE=1700V VCE=1200V |
2 -- -- |
|
6.8 -- -- |
-- 6.2 5.3 |
V |
|
VLevel |
Logic level (External error input; reset signal; mode select) |
|
+8 |
|
+15 |
V |
|
tpReset |
Vin input both Low reset time |
|
20 |
|
|
μs |
|
CPS |
Primary to secondary capacitance |
|
8 |
|
|
pf |
●Diode-clamped 3-level topology
●Dual PWM control 3-level topology
●SVG
●Inverter
●photovoltaic inverter
●High power UPS
●High power high frequency SMPS
