| Model: | - |
|---|---|
| Brand: | SEPNA |
| Origin: | - |
| Category: | Electronics & Electricity / Other Electrical & Electronic |
| Label: | thermal adhesive , silicone sealant , rtv silicone |
| Price: |
US $2.1
/ pc
|
| Min. Order: | 2000 pc |
| Last Online:02 Jun, 2016 |
SI1316 series are neutral dealcoholized organic silicone adhesive sealant, room temperature cured by contacting with the moisture in the air. Add special thermally conductive material, after cured it becomes flexible rubber body, compliant with RoHS. The substances released during the curing process is alcohol, it’s non-corrosive to materials like polycarbonate, copper. Has good adhesion to most kinds of material.Used for protection of electronic products which under the harsh conditions.
Data Table
|
PROPERTY |
STANDARD/UNITS |
VALUE |
|
|
Before curing |
SI1316 |
SI1317 |
|
|
Color |
Visual inspection |
White |
|
|
Viscosity |
25°C, mPa·s |
Paste |
|
|
Density |
25°C, g/cm3 |
1.65 |
2.25 |
|
Tack free time |
25°C, 55%RH, min |
2~5 |
2~5 |
|
After cured |
|||
|
Hardness |
Shore A |
50±5 |
65±5 |
|
Thermal conductivity |
W/m.K |
0.82 |
1.50 |
|
Elongation at break |
% |
150 |
100 |
|
Tensile strength |
MPa |
≥1 90 |
≥2 |
|
Shear strength |
MPa, iron/iron |
≥1 |
≥2 |
|
Dielectric strength |
kV/mm, 25°C |
20 |
20 |
|
Loss factor |
1 MHz, 25°C |
0.09 |
0.09 |
|
Dielectric constant |
1 MHz, 25°C |
2.9 |
2.9 |
|
Volume resistance |
(DC500V) Ω· cm |
2.0×1014
|
2.0×1014
|
Features
1. It has a high thermal conductivity
2. Excellent comprehensive properties, elasticity, non-yellowing, no bleed oil
3. Moisture, dirt and other atmospheric composition proof
4. Relieving the mechanical stress and tension that cased by machinery, heat shock and vibrate
5. Good corona resistance and electrical insulation performance
6. Excellent outdoor aging-resistance for 20-30 years
7. Stable mechanical and electrical properties between -60-260°C
Usage
Used for sealing LED lamps, thermal dissipation of auto electrical components, PCB and other heat dissipation components. Gap filling between power transistor, diode thyristor and substrates.