| Model: | GN010011P53 |
|---|---|
| Brand: | - |
| Origin: | - |
| Category: | Electronics & Electricity / Electronics Stocks |
| Label: | - |
| Price: |
US $0.1
/ pc
|
| Min. Order: | 10 pc |
| Last Online:05 Aug, 2024 |
GN010011P53 series GaN Internally Matched Power Amplifier
GN010011P53 is a gallium nitride high electron mobility transistor (GaN HEMT),a high power internally matched power tube,which can work in pulse mode at saturated power,used in standard communication and radar frequency bands,and provides the best power and gain performance in 50Ω system.
Covering the working frequency band:0.99 ~1.13GHz
Good 50Ω impedance matching,easy to cascade
Metal ceramic tube sealed package
Screw-fixed flange package or welded pill package
| Electrical performance table: | ||||||||||
| 1.Working conditions:50Ω test system,VDS=+48V,IDS=50mA.((Typical test conditions: TA = +25℃,pulse width:10us,4% duty cycle.) | ||||||||||
| Parameter | Test Conditions | Minimum | Typically | maximum | Unit | |||||
| Saturation power | Freq.=0.98GHz~1.08GHz Vgs=-3.48V
VDS=+50V IDsq=5~100mA |
53.0 | - | - | dBm | |||||
| Power Gain | 35.0 | - | - | dB | ||||||
| Power Added
Efficiency |
65.0 | - | - | % | ||||||
| Power Flatness | - | 2.0 | dB | |||||||
| Pinch-off voltage | VDS=6V | IDS≤100mA | -5 | - | -3.50 | V | ||||
| Gate-source reverse
Current |
VDS=0V | VGS=-10V | - | 5 | uA | |||||
| Note:The final technical indicators and dimensions are subject to the technical agreement.Products with similar
power specifications,higher efficiency and wider bandwidth can be customized. |
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| Working limit parameter: | ||||||||||
| Source-drain voltage Vds | +100V | wasted power
（Tc=25℃) |
220W | |||||||
| Gate-source voltage Vgs | -10V | storage temperature | -55℃~+125℃ | |||||||
| Operating temperature | -40℃~+75℃ | - | - | |||||||
