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Category: | Industrial Supplies / Machine Hardware / Valves |
Label: | Zinc Oxide ZnO , AZO GZO IGZO IZO , Y2O3 Ga2O3 In2O3 |
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Last Online:18 Dec, 2024 |
Specifications: | Al2O3 and Ga2O3 doped ZnO (AZO and GZO) semiconductors are promising as alternatives to ITO for thin-film transparent electrode applications. In particular, AZO thin films, with a low resistivity and materials that are inexpensive and non-toxic, are the best candidates. Serve as the raw materials for the sputter deposition of a variety of thin films and coatings used in the microelectronic, flat panel display, data storage, optical glass coating, and other industries, the core process technologies used in coating material and target manufacturing include: Casting (vacuum or atmospheric), rolling, forging (hot / cold), pressing (cold, hot, uniaxial or isotropic), sintering, spraying (plasma, wire). CAM runs all these process technologies, including cutting, milling, sawing, grinding, etc. Purity: 98%, 99%, 99.5%, 99.9%, Purity: 98%, 99%, 99.5%, 99.9%, 99.95%, 99.99%, 99.999% 1.) Oxide sputtering target: CeO2, Nd2O3, Sm2O3, Eu2O3, Gd2O3, Tb4O7, Dy2O3, Ho2O3, Er2O3, Tm2O3, Yb2O3, Lu2O3, Sc2O3, Y2O3, Ta2O5, Nb2O5, Ga2O3, V2O5, ZrO2 doped with Ti, WO3, WO2.9, HfO2, MgO, Al2O3, Indium Tin Oxide, ITO (In2O3-SnO2), ZnO, Al2O3 doped ZnO (AZO), IZO (Indium Zinc Oxide, 90 wt% In2O3 / 10 wt% ZnO), Ga2O3 doped ZnO (GZO), IGZO, La0.67Sr0.33MnO3 (LSMO), ZrO2-Y2O3 stabilized (YSZ), SnO2, Sb2O3 doped SnO2 (ATO), ZrO2+Ti, ZrO2+Zr, ZrO2+SiO2, Bi2O3, Cr2O3, MoO, MoO3, NiO, SiO, Cr-SiO, SiO2, TiO, TiO2, TiO2-Nb2O5, Ti2O3, Ti3O5, CuO/Al2O3, Sb2O3, BaO, BaTiO3, CaO, Fe2O3, Fe3O4, PbO, PbTiO3, PbZrO3, LiNbO3, SrO, SrTiO3, SrZrO3, SrBaTiO3, PZT (Plumbum Zirconate Titanate), LaNiO3, InGaZnO, CuInO2, LaAl2O3. 2.) (Boride, Carbide, Nitride, Fluoride, Silicide, Sulfide) sputtering target LaB6, ZrB2, CrB2, TiB2, HfB2, Mo2B5, TaB2, NbB2, W2B, WB, VB2 TiC, SiC, WC, WC-Co, WC-Ni, B4C, TaC, ZrC, Cr3C2, HfC, Mo2C, VC Si3N4, AlN, BN, BN/SiC mixture, HfN, TaN, NbN, ZrN, TiN, VN LaF3, CeF3, NdF3, YF3, NaF, KF, BaF2, AlF3, LiF, CaF2, SrF3, SrF2, MgF2 CoSi2, Mo5Si3, MoSi2, Ta5Si3, TaSi2, Nb5Si3, NbSi2, CrSi2, Cr3Si, HfSi2, TiSi2, Ti5Si3, ZrSi2, WSi2, VSi2, V3Si, NiSi, CdS, ZnS, ZnS:Mn, In2S3, Sb2S3, PbS, MoS2, TaS2, WS2 3.) Metal sputtering target: Silver, Ag, Iridium, Ir, Ruthenium, Ru, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Sc, Y, Silicon, Si, Tellurium, Te, Bismuth, Bi, Tin, Sn, Zinc, Zn, Boron, B, Lead, Pb, Antimony, Sb, Chromium, Cr, Cobalt, Co, Aluminum, Al, Nickel, Ni, Titanium, Ti, Tungsten, W, Molybdenum, Mo, Tantalum, Ta, Niobium, Nb, Zirconium, Zr, Hafnium, Hf, Vanadium, V, Germanium, Ge, Indium In, Copper, Cu, Iron, Fe, Manganese, Mn, Magnesium, Mg. 4.) Alloy sputtering target: Ag-Al, Ag-Cu, Ag-La, Ag-Lu, Ag-Mg, Al-Sm, Ag-Sn, Al-Ag, Al-Cr, Al-Cu, Al-Dy, Al-Er, Al-Gd, Al-Mg, Al-Mg-Si, Al-Sc, Al-Si, Al-Si-Cu, Al-Sm, Al-Ta, Al-Ti, Al-Mo, Al-Nd, Al-V, Al-Y, Al-Yb, Cd-Sn, Ce-Ag, Ce-Cu, Ce-Gd, Ce-Sm, Ce-Ti, Co-Al, Co-B, Co-Cr, Co-Cr-Al, Co-Cr-Fe, Co-Fe, Co-Fe-B, Co-Fe-Gd, Co-Gd, Co-Ni, Co-Ni-Cr, Co-Tb, Co-V, Co-Zr, Cr-Al, Cr-B, Cr-Cu, Cr-Mn, Cr-Ni, Cr-Si, Cr-V, Cu-Al, Cu-Ga, Cu-Ge, Cu-In, Cu-Ni, Cu-Zn, Dy-Fe, Dy-Co, Dy-Fe-Co, Fe-Al, Fe-B, Fe-Co, Fe-Gd, Fe-Hf, Fe-Mn, Fe-Ni, Fe-Si, Gd-Ce, Gd-Fe, Gd-Fe-Co, Gd-Er-Si, Gd-Tb, Gd-Ti, Ho-Cu, Hf-Fe, Hf-Y, In-Sb, In-Sn, In-Zn, LaB6, La-Al, La-Ni, Mg-Al, Mg-Ca, Mg-Dy, Mg-Gd, Mg-In, Mg-Nd, Mg-Nd-Zr-Y, Mg-Sc, Mg-Sm, Mg-Y, Mg-Zr, Mn-Fe, Mn-Ni, Mo-Cr, Mo-Si, Nb-Ti, Nd-Ag, Nd-Fe-B, Ni-Al, Ni-Cu, Ni-Cr, Ni-Cr-Al, Ni-Cr-Si, Ni-Fe, Ni-Mn, Ni-Ti, Ni-V, Ni-V-Zr, NiYb, Ni2Yb, Ni3Yb, Ni-Yb, Ni-Zr, Sc-Ni, Sc-Zr, Sm-Co, Sm-Fe, Sm-Zr, Ta-Al, Ti-Al, Ti-Al-Cr, Ti-Al-Y, Ti-Al-V, Ti-Co, Ti-Cr, Ti-Ni, Ti-Si, TiSi2, Ti-Zr, Tb-Dy, Tb-Dy-Fe, Tb-Fe, Tb-Fe-Co, Tb-Gd-Fe-Co, V-Al, V-Co, V-Cr, V-Cu, V-Fe, V-Mo, V-Ni, V-Ti, V-Ti-Al, W-Ti, W-Si, Y-Ti, Y-Zr, Y-Zr-Mg, Zn-Al, Zr-Al, Zr-Ce, Zr-Cu, Zr-Gd, Zr-Si, Zr-Ti, Zr-Y EVAPORATION MATERIALS La2O3, CeO2, Pr6O11, Nd2O3, Sm2O3, Gd2O3, Dy2O3, Er2O3, Sm2O3, Yb2O3, Y2O3, LaF3, CeF3, PrF3, NdF3, SmF3, GdF3, DyF3, ErF3, YbF3, ScF3, YF3, HfO2, CaF2, ZnS, CdS, SiO2, HfO2, ZrO2, TiO2, TiO, Ti2O3, Ti3O5, Ta2O5, Nb2O5, SiO2, Al2O3, MgO, ZnO, WO3, Bi2O3, Sb2O3, Cr2O3, NiO, CuO, Fe2O3, V2O5, BaTiO3, SrTiO3, PrTiO3, LaTiO3, MgF2, BaF2, SrF3, CaF2, KF, NaF, ZnS, CdS, ZnSe. Specification of materials (custom composition, drawing and size upon request): 1.) Foil, sheet, plate Thickness: 0.05mm min. Length: 1500mm max. Width: 800mm max. 2.) Disc, wafer Thickness: 0.05mm min. Diameter: 600mm max. 3.) Powder From -40, -60, -325, -325 to -1000 mesh 4.) Granule or pellet Diameter:1mm-10mm 5.) Wire: Diameter: 0.1mm min. Length: according to customer's requirements. 6.) Rod Diameter: 1.0mm-40mm Length: 1500mm max. |
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