Product Description
AE-6000C-type flexible shaft crystal growth furnace is to melt silicon semiconductor materials by graphite resistance heater in an inert gas environment, Using czochralski Technique dislocation-free crystal growth equipment, it can produce high quality single crystal which for solar photovoltaic devices.
|
Main technical parameters
|
|
Properties
|
Model
|
|
AE-85
|
AE-95
|
AE-120
|
|
Diameter of Growth Tank (mm)
|
850
|
950
|
1200
|
|
Ingot diameter (inch)
|
6 - 8
|
8 - 10
|
8-16
|
|
Silica crucible size (inch)
|
18-20
|
22-24
|
24-28
|
|
Max charge amount (Kg)
|
95
|
150
|
260
|
|
Max crystal length (mm)
|
2000
|
2000
|
2000
|
|
Seed pulling rate(mm/Hr)
|
0-508
|
0-508
|
0-508
|
|
Seed Jog Speed (mm/Min)
|
0-508
|
0-508
|
0-508
|
|
Seed rotation rate (rpm)
|
0-40
|
0-40
|
0-40
|
|
Crucible Elevate Rate (mm/Hr)
|
0-128
|
0-128
|
0-128
|
|
Crucible Jog Speed (mm/Min)
|
0-50.8
|
0-50.8
|
0-50.8
|
|
Crucible rotation rate (rpm)
|
0-20
|
0-20
|
0-20
|
|
Crucible Travel stroke (mm)
|
400
|
420
|
480
|
|
Maximum weight for
crucible support (Kg)
|
165
|
230
|
450
|
|
Main line pump rate (SL/Sec)
|
70
|
70
|
150
|
|
Auxiliary pump rate (SL/Sec)
|
8
|
8
|
8
|
|
Ultimate pressure (Pa)
|
less than 4
|
less than 4
|
less than 4
|
|
Permissible leak rate (Pa/Hr)
|
less than 6
|
less than 6
|
less than 6
|
|
Gas flow control range (SL/Min)
|
4-200
|
4-200
|
4-200
|
|
Working pressure range (Pa)
|
1500-5000
|
1500-5000
|
1500-5000
|
|
AC power input (3 phase, 380V)
|
140 KW
|
200 KW
|
250 KW
|
|
Number of Heating Elements
|
1
|
2
|
2
|
|
Magnetic Coil
|
Optional
|
Optional
|
Optional
|
|
|
Main technical parameters
|
|
Properties
|
Model
|
|
AE-85
|
AE-95
|
AE-120
|
|
Diameter of Growth Tank (mm)
|
850
|
950
|
1200
|
|
Ingot diameter (inch)
|
6 - 8
|
8 - 10
|
8-16
|
|
Silica crucible size (inch)
|
18-20
|
22-24
|
24-28
|
|
Max charge amount (Kg)
|
95
|
150
|
260
|
|
Max crystal length (mm)
|
2000
|
2000
|
2000
|
|
Seed pulling rate（mm/Hr）
|
0-508
|
0-508
|
0-508
|
|
Seed Jog Speed (mm/Min)
|
0-508
|
0-508
|
0-508
|
|
Seed rotation rate (rpm)
|
0-40
|
0-40
|
0-40
|
|
Crucible Elevate Rate (mm/Hr)
|
0-128
|
0-128
|
0-128
|
|
Crucible Jog Speed (mm/Min)
|
0-50.8
|
0-50.8
|
0-50.8
|
|
Crucible rotation rate (rpm)
|
0-20
|
0-20
|
0-20
|
|
Crucible Travel stroke (mm)
|
400
|
420
|
480
|
|
Maximum weight for
crucible support (Kg)
|
165
|
230
|
450
|
|
Main line pump rate (SL/Sec)
|
70
|
70
|
150
|
|
Auxiliary pump rate (SL/Sec)
|
8
|
8
|
8
|
|
Ultimate pressure (Pa)
|
less than 4
|
less than 4
|
less than 4
|
|
Permissible leak rate (Pa/Hr)
|
less than 6
|
less than 6
|
less than 6
|
|
Gas flow control range (SL/Min)
|
4-200
|
4-200
|
4-200
|
|
Working pressure range (Pa)
|
1500-5000
|
1500-5000
|
1500-5000
|
|
AC power input (3 phase, 380V)
|
140 KW
|
200 KW
|
250 KW
|
|
Number of Heating Elements
|
1
|
2
|
2
|
|
Magnetic Coil
|
Optional
|
Optional
|
Optional
|
|
AE-6000C-type flexible shaft
crystal growth furnace is to melt silicon semiconductor materials by graphite resistance heater in an inert gas environment, Using czochralski Technique dislocation-free crystal growth equipment, it can produce high quality single crystal which for solar photovoltaic devices.
Product Image
Send Inquiry to this Member
Related Products of this Company
This member assumes full responsibility for the content of this listing. DIYTrade accepts no responsibility whatsoever in respect of such content.
To report fraudulent or illegal content, please
click here.
China Suppliers Quick Searching:
,
