Indium (In)
1, Physical character:
Atomic Weight: 114.818
Electronegative: 1.78
Density: ρ=7.31 g·cm—3 (0-100℃)
Melting Point: 156.5985 ℃
Boiling Point: 2072 ℃
2, Specification:
High Purity Indium:
In-05 Grade 99.999. The content of Indium is above 99.999%. The total content of Ag, Al, As, Cd, Cu, Fe, Mg, Ni, Pb, S, Si, Sn, Tl, & Zn is bellow 10 ppm;
Uitra Purity Indium:
In-06 Grade 99.9999. The content of Indium is above 99.9999%. The total content of Cd, Cu, Fe, Mg, Pb, S, Si & Sn is bellow 1 ppm;
Uitra High Purity Indium:
In-07 Grade 99.99999. The content of Indium is above 99.99999%. The total content of Ag, Cd, Cu, Fe, Mg, Ni, Pb & Zn is bellow 0.1 ppm;
3, Physical Size:
Virgulate, Ingot, Granule.
4, Usage:
It is mainly used in the manufacture of III-V compound semiconductor, high purity alloy, transistor base and as a dopant of Germanium & Silicon single crystal.
5, Packing:
It is packed with dacron film, then covered with a sealed plastic film bag or vacuum sealed in a glass ampule.