RA45H7687M1射频模块
| 型号： | RA45H7687M1 |
|---|---|
| 品牌： | MIT |
| 原产地： | 日本 |
| 类别： | 电子、电力 / 其它电力、电子 |
| 标签︰ | RA45H , RF模块 |
| 单价： |
¥34
/ 件
|
| 最少订量： | 1 件 |
产品描述
DE
The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for
12.8-volt mobile radios that operate in the 763- to 870-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage 1 and the gate voltage 2(VGG1=VGG2=0V), only a small
leakage current flows into the drain and the nominal output signal
(Pout=45W) attenuates up to 60 dB. When fixed i.e. 3.4V, is
supplied to the gate voltage 1, the output power and the drain
current increase as the gate voltage 2 increases. The output
power and the drain current increase substantially with the gate
voltage 2 around 0V (minimum) under the condition when the gate
voltage 1 is kept in 3.4V. The nominal output power becomes
available at the state that VGG2 is 4V (typical) and 5V (maximum).
At this point, VGG1 has to be kept in 3.4V.
At VGG1=3.4V & VGG2=5V, the typical gate currents are 0.4mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltages and controlling the output power
with the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD0 @ VDD=12.8V, VGG=0V)
• Pout>45W, T>33% @VDD=12.8V, VGG1=3.4V, VGG2=5V, Pin=50mW
• Broadband Frequency Range: 763-870MHz
• Metal cap structure that makes the improvements of RF radiation
simple
• Low-Power Control Current IGG1+IGG2=0.4mA (typ) @ VGG1=3.4V, VGG2=5V
• Module Size: 67 x 19.4 x 9.9 mm
• Linear operation is possible by setting the quiescent drain current with the gate voltages and controlling the output
power with the input power.
RoHS COMPLIANCE
• RA45H7687M1 is a RoHS compliant product.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes.
2.Lead in electronic Ceramic parts.
北京京瑞馨科技--供应全新原装正品射频模块、射频管！假一罚十！！！
全新原装正品供应：
三菱（MITSUBISHI）:（HF/VHF/UHF/900MHz（分立MOSFET）
三菱（MITSUBISHI）:
RA60H4452M1、RA60H4047M1、RA60H3847M1、RA60H1317M1A、RA60H1317M
东芝（TOSHIBA）：
2SK3075(TE12L,Q)、2SK3078(TE12L,Q)、2SK3079A(TE12L,Q)、
瑞萨（RENESAS）：
RQA0001DNS（RQA0001DNSTR-E）、 RQA0002DNS（RQA0002DNSTB-E）、
ST：
PD55003-E、PD55003S-E、PD55008-E、PD55008S-E、PD55015-E、PD55015S-E
防雷器件：
The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for
12.8-volt mobile radios that operate in the 763- to 870-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage 1 and the gate voltage 2(VGG1=VGG2=0V), only a small
leakage current flows into the drain and the nominal output signal
(Pout=45W) attenuates up to 60 dB. When fixed i.e. 3.4V, is
supplied to the gate voltage 1, the output power and the drain
current increase as the gate voltage 2 increases. The output
power and the drain current increase substantially with the gate
voltage 2 around 0V (minimum) under the condition when the gate
voltage 1 is kept in 3.4V. The nominal output power becomes
available at the state that VGG2 is 4V (typical) and 5V (maximum).
At this point, VGG1 has to be kept in 3.4V.
At VGG1=3.4V & VGG2=5V, the typical gate currents are 0.4mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltages and controlling the output power
with the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD0 @ VDD=12.8V, VGG=0V)
• Pout>45W, T>33% @VDD=12.8V, VGG1=3.4V, VGG2=5V, Pin=50mW
• Broadband Frequency Range: 763-870MHz
• Metal cap structure that makes the improvements of RF radiation
simple
• Low-Power Control Current IGG1+IGG2=0.4mA (typ) @ VGG1=3.4V, VGG2=5V
• Module Size: 67 x 19.4 x 9.9 mm
• Linear operation is possible by setting the quiescent drain current with the gate voltages and controlling the output
power with the input power.
RoHS COMPLIANCE
• RA45H7687M1 is a RoHS compliant product.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes.
2.Lead in electronic Ceramic parts.
北京京瑞馨科技--供应全新原装正品射频模块、射频管！假一罚十！！！
全新原装正品供应：
三菱（MITSUBISHI）:（HF/VHF/UHF/900MHz（分立MOSFET）
RD100HHF1、RD70HVF1、RD70HUF2、RD70HHF1、RD60HUF1、RD45HMF1、RD35HUF2、
RD30HUF1、RD30HVF1、RD20HMF1、RD16HHF1、RD15HVF1、RD12MVP1、RD12MVS1、
RD09MUP2、RD07MVS1B、RD07MVS1、RD07MVS2、RD07MUS2B、RD06HVF1、RD06HHF1、
RD05MMP1、RD04HMS2、RD02MUS1、RD02MUS1B、RD02MUS2、RD02MUS2B、RD01MUS1、
RD01MUS2B、RD01MUS2、RD00HHS1、RD00HVS1等RD系列
三菱（MITSUBISHI）:
RA60H4452M1、RA60H4047M1、RA60H3847M1、RA60H1317M1A、RA60H1317M
RA55H4452M、RA55H4047M、RA55H3847M、RA55H3340M、RA45H8994M1、RA45H7687M1、
RA45H4452M、RA45H4047M、RA45H4045MR、RA35H1516M、RA33H1516M1、RA30H4552M1、
RA30H4452M、RA30H4047M1、RA30H4047M、RA30H3340M、RA30H2127M、RA30H1721M、
RA30H1317M1、RA30H1317M、RA30H0608M、RA20H8994M、RA20H8087M、RA18H1213G、
RA13H8891MA、RA13H8891MB、RA13H4452M、RA13H4047M、RA13H3340M、RA13H1317M、
RA08H1317M、RA08N1317M、RA07N4452M、RA07N4047M、RA07N3340M、 RA07M4452MSA、
RA07M4452M、RA07M4047MSA、RA07M4047M、RA07M3843M、RA07M3340M、RA07M2127M、
RA07M1317MSA、RA07M1317M、RA07M0608M、RA07H4452M、RA07H4047M、RA07H3340M、
RA07H0608M、RA06H8285M、RA05H9595M、RA05H8693M、RA03M9595M、RA03M8894M、
RA03M8087M、RA03M4547MD、RA03M4043MD、RA03M3540MD、RA02M8087MD、
RA01L9595M、RA01L8693MA等RA系列；
东芝（TOSHIBA）：
2SK3075(TE12L,Q)、2SK3078(TE12L,Q)、2SK3079A(TE12L,Q)、
2SK3475(TE12L,Q)、2SK3476(TE12L,Q)、2SK3756(TE12L,Q)、
2SK4037(TE12L,Q)、2SC5066-Y(T5L,F,T)(M2)等2SC、2SK系列；
瑞萨（RENESAS）：
RQA0001DNS（RQA0001DNSTR-E）、 RQA0002DNS（RQA0002DNSTB-E）、
RQA0003DNS（RQA0003TL-E）、 RQA0004LXAQS（RQA0004LXTL-E）、
RQA0005MXAQS（RQA0005MXTL-E）、 RQA0005AQS#H1、
RQA0005QXDQS（RQA0005QXTL-E）、 RQA0008NXAQS（RQA0008NXTL-E）、
RQA0009SXAQS（RQA0009SXTL-E）、 RQA0010UXAQS（RQA0010UXAQSTL-E）、
RQA0010VXDQS（RQA0010VXDQSTL-E）、RQA0011DNS（RQA0011DNSTB-E）、
RQA0014XXAQS（RQA0014XXAQSTL-E） RQA0014XXDQS（RQA0014XXDQSTL-E）等；
M62363FP#TF0G、 M3062LFGPGP#U3C、 M3062LFGPGP#U5C等M系列
ST：
PD55003-E、PD55003S-E、PD55008-E、PD55008S-E、PD55015-E、PD55015S-E
防雷器件：
P0300ECL、P0300ECLRP1、P0720ECL等P系列
有用到的，都可以与我联系，全新原装正品，优势供应！
有用到的，都可以与我联系，全新原装正品，优势供应！
会员信息
| 北京京瑞馨科技有限公司 | |
|---|---|
| 国家/地区︰ | 北京市朝阳区 |
| 经营性质︰ | 贸易商 |
| 联系电话︰ | 18210450337 |
| 联系人︰ | 何端木 (销售QQ51552801) |
| 最后上线︰ | 2014/06/13 |