Absolute Maximum Ratings
AS1133-01
(Ta= 25℃)
Parameter
Reverse Voltage（BVR/V）：10
Junction Temperature（TJ/℃):150

Operating Temperature(TOPR/℃):-30 ~ 100

Storage Temperature(TSTG/℃):-40 ~ 110

■ Electro-Optical Characteristics (Ta=22℃)
Parameter
Photosensitivity
Rise Time
N．E．P．
Dark Current
Capacitance
Symbol
S
Tr
W/Hz1/2
ID
Ct
Conditions
240nm
340nm
410nm, VR=5V,50Ω
-
VR=5V
f=1MHz VR=5V
Min
-
-
-
-
-
Typ
0.10
0.33
0.2
1.5 × 10-14
20
200
Max
-
-
-
-
Unit
A/W
μs
pA
㎊
Spectrum Sensitivity(λ/nm)190 -720

Peak Sensing Wavelength(λP):1100 nm

Half Angle ΔΘ - ±70 - Deg.

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