MOS -> N-MOS
The XZ2106 is the N-Channel logic enhancement mode power field effect ransistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone, notebook computer power management and other battery powered circuits,and low in-line power loss that are needed in a very small outline surface mount package.