DESCRIPTION
The SY2300 is the N-Channel logic enhancement mode power field effect transistor is
produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.These devices
are particularly suited for low voltage application such as cellular phone and notebook
computer power management and other batter powered circuits, and low in-line power loss
are needed in a very small outline surface mount package.