RF LN AMPLIFIER TRARNSISTOR HT9425

RF LN AMPLIFIER TRARNSISTOR HT9425
Model:HT9425
Brand:HN
Origin:Made In United States
Category:Electronics & Electricity / Electronic Components / Diode & Triode
Label:25 GHz wideband TR , 2SC5508 , BFG425W
Price: -
Min. Order:-

Product Description

Collector to Emitter Voltage: >4.5V
Collector to Base Voltage: >9V
Emitter to Base Voltage: 1V
Transition Frequency: 25GHz
SiGe heterojunction bipolar transistor has better properties than silicon epitaxial transistor.
Pin-pin to replace of 2SC5508, BFG425W.
specifications:The HT9425 is a SiGe NPN HBT (Heterojunction bipolar transistor) designed for high frequency low noise. It has advantages such as low noise figure, high power gain, high voltage, broad dynamic range and good linearity. The HT9425 is available in cost effective 4-lead SOT343R package type.
Collector to Emitter Voltage: >4.5V
Collector to Base Voltage: >9V
Emitter to Base Voltage: 1V
Transition Frequency: 25GHz
Advantages:SiGe heterojunction bipolar transistor has better properties than silicon epitaxial transistor.
Pin-pin to replace of 2SC5508, BFG425W.
RF LN AMPLIFIER TRARNSISTOR HT9425 1

Member Information

Nanjing Honano Electronic Co., Ltd.
Country/Region:Jiang Su - China
Business Nature:Manufacturer
Phone:86-25-68853600-801
Contact:Jimmy Xu (Manager)
Last Online:29 Oct, 2024

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