Ion implantation is an important process during the manufacture of semiconductors. Implanters dope wafers with "foreign atoms" in order to modify material properties such as conductivity or crystal structure.
The heart of an implanter system is the beam path. Here, the ions are generated, concentrated, accelerated dramatically and guided at high speed to the wafer.

Temperatures of up to 1 400 °C, strong electromagnetic fields, aggressive process gases and powerful mechanical forces cause problems for conventional materials. But not for our products.
  Our heat-resistant components made from molybdenum, tungsten, graphite or ceramics excel due their ideal combination of corrosion resistance, material strength, high thermal conductivity and absolute purity. 100 or more PLANSEE components are at work in every beam path. They ensure that the ions are generated efficiently and guided precisely and free from impurities along the beam path to the wafer.