Amorphous structures in materials exhibit exceptional characteristics, including high strength and hardness. They also are associated with superior wear resistance in a bulk metallic glass (BMG) matrix. Co40Fe40B20 magnetic thin films have just such an amorphous structure. Amorphous Co40Fe40B20 free/pinned layer of spin value is expected to be applied in magnetoresistance (MR) read-out heads for density magnetic recording applications. Co40Fe40B20 magnetic thin films have attracted increasing attention owing to their use in applications that involve giant magnetoresistance (GMR), tunneling magnetoresistance (TMR), and magnetoresistance random access memory (MRAM), because of their low coercivity (Hc) and high spin polarization. The material has a high spin-dependent scattering, lower coercivity, and stronger spin tunneling effect and therefore supports a higher output signal for particular GMR and TMR ratios in amorphous CoFeB/Ru/CoFeB, CoFeB/AlOx/CoFeB, and CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs).
 

Available Products
 
Cobalt Iron Boron (CoFeB) Plate Targets, Cobalt Iron Boron (CoFeB) Round Targets, Cobalt Iron Boron (CoFeB) Evaporation Materials

Cobalt Iron Boron (CoFeB) Round Targets: Diameter <14inch, Thickness >1mm

Cobalt Iron Boron (CoFeB) Plate Targets: Length <32inch, Width <12inch, Thickness >1mm

Cobalt Iron Boron (CoFeB) Evaporation Materials: 1-6mm pellets