Dual high power IGBT drive
| Model: | 2DI 615 |
|---|---|
| Brand: | power-sem |
| Origin: | Made In China |
| Category: | Electronics & Electricity / Electronic Components / Other Electronic Components |
| Label: | IGBT driver , IGBT driver circuit , IGBT driver board |
| Price: |
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| Min. Order: | 1 pc |
Product Description
2DI 615 Dual high power IGBT driver
2DI 615T SMT dual high power IGBT driver
2DI 615M Dual SiC IGBT driver
Absolute Maximum Ratings (Ta=25℃)
Max. supply voltage primary +16 V
Max. supply current primary 430 mA
Total power of DC/DC isolation power output 6 W
Output average current per channel 120 mA
Output peak current per channel ±15 A
Isolation voltage (1 minute. AC) 5000 V
Minimal Rgon/Rgoff 1.6 Ω
Charge per pulse ±10 μC
Rate of rise and fall of voltage 75 kV/μs
Max. working frequency 100 kHz
Operating temperature -40...+80 ℃
Storage temperatature -45...+85 ℃
Electrical Characteristics (Ta=25℃)
Supply voltage primary +15V
No-load current primary （fSW=0）95 mA
Turn-on gate voltage +15V
Turn-off gate voltage -9V
IN-OUT turn-on delay time 300ns
IN-OUT turn-off delay time 300ns
Drive capability
35kHz is suitable for FF300R12KS4
15kHz is suitable for FF600R17ME4
Member Information
| BEIJING POWER-SEM ELECTRONIC TECHNIQUE CO. LTD. | |
|---|---|
| Country/Region: | Beijing - China |
| Business Nature: | Manufacturer |
| Phone: | 15811051473 |
| Contact: | Alice lau ( manager) |
| Last Online: | 28 Dec, 2017 |
