Silicon Nitride Si3N4 has high thermal stability, hardness and good dielectric properties,which is mainly used in microelectronics as an insulator and a chemical barrier for protective packaging of devices. As a passivation layer, it presents a higher diffusion barrier against water molecules and sodium ions.

1.) Oxide sputtering target:     
LaCoO3, B2O3, CeO2, CeO2/Sm2O3, CeO2/Lu2O3, CoO, Pr2NiO4, Nd2O3, MnO2, Sm2O3, HfLaO, HfAlO, Eu2O3, SrCoO3, Gd2O3, Bi1.2AlO3, Tb4O7, Li5.2Ti5O12, Dy2O3, Li1.4CoO2, Ho2O3, Sr3Al2O6, Er2O3, BaSnO3, Tm2O3, Yb2O3, Lu2O3, Sc2O3, Y2O3, Ta2O5, Ta2Ox, Nb2O5, Nb2Ox, Ga2O3, V2O5, V2O3, VO2, VOx, ZrO2 doped with Ti, WO3, WO2.9, WO3/MoO3, HfO2, MgO, MgO/Cr, Al2O3, Al2O3/Cr, In2O3, Indium Tin Oxide, ITO (In2O3-SnO2), In2O3/CaO, ZnO, Al2O3 doped ZnO (AZO), IZO (Indium Zinc Oxide, 90 wt% In2O3 / 10 wt% ZnO), In2O3/CaO ICO, Li2O/ZnO LZO, Ga2O3 doped ZnO (GZO), IGZO, ZnO2/TiO2, ZnO2/ZrO2, ZnO/Li, ZnO/Mg, ZnO/LiCl, ZnO/ZnS, La0.67Sr0.33MnO3 (LSMO), ZrO2-Y2O3 stabilized (YSZ), SnO2, Sb2O3 doped SnO2 (ATO), SnO2/F FTO, ZrO2+Ti, ZrO2+Zr, ZrO2+SiO2, Bi2O3, Bi2O3/Dy2O3/Fe2O3, Cr2O3, MoO, MoO3, NiO, NiO/Li, SiO, Cr-SiO, SiO2, TiO, TiO2, TiOx, TiO2/Nb2O5, Ti2O3, Ti3O5, CuO/Al2O3, Cu2O, Sb2O3, BaO, CaO, Fe2O3, Fe3O4, PbO, PbTiO3, PbZrTiO3, PbZrO3, PbZr0.52Ti0.48O3, PbZr0.2Ti0.8O3, Pb1.2ZrO3, LiNbO3, SrO, FeTiO3, SrTiO3, SrRuO3, BaTiO3, PbTiO3, SrZrO3, BaZrO3, SrBaTiO3, PZT (Plumbum Zirconate Titanate), LaNiO3, InGaZnO, CuInO2, LaAl2O3, CGO, Y3Fe5O12 YIG, Y2Ce1Fe5O12, Gd3Ga5O12, Tm3Fe5O12 TIG, Ce2Bi0.5Y0.5Fe5O12, Li6.4La3Zr1.7W0.3O12, Li7La3Zr2O12, HfO2, ZrO2, LiCoO2, Li3PO4, Cd2SnO4, BiFeO3, Yb2Hf2O7, Yb6HfO11, Yb4Hf3O12, Yb2SiO5, LiMn2O4, Li4Ti5O12, LiLaTi2O6, Mg2SiO4, MgFePO4, Bi2WO6, RuO2, MgMnSiO4, MgFeSiO4, NdNiO3, BaFe12O19, SiO2/Cr2O3, BaZr0.8Y0.2O3, SiO2/In2O3/ZnO, Ba0.5Sr0.5TiO3, MgCa(CO3)2, PbZr0.6Ti0.4O3, Li2WO4, Ba0.6Sr0.4TiO3, Ba0.8Sr0.2TiO3, NiCoO, BaZrO3/Y2O3/YBa2Cu3O7, Bi1.5Zn1.0Nb1.5O7, LaAlO3, LaMnO3 BZN, Bi1.1FeO3, Ba(Zr0.8Y0.2)O3, Ce2.5Y0.5Fe5O12, Yb2HfO2, Yb6HfO11, Yb2Hf2O7, Yb2O3/HfO2, BaPbO3, InMnO3, SmFeO3, SmNiO3, Bi1.05FeO3, SrFe12O19, CdTeO3, TeO2, CdO, Co3O4, Bi4(TiO4)3, LiFePO4, CoFe2O4, BaHfO3, SrHfO3

2.) (Boride, Carbide, Nitride, Fluoride, Silicide, Silicate, Sulfide, Telluride, stannate) sputtering target     
AlB2, LaB6, SmB6, GdB6, ZrB2, CrB2, TiB2, HfB2, Mo2B5, TaB2, NbB2, W2B, WB, VB2, TiB, Boron 
Cr2AlC, Ti2AlC, V2AlC, TiC, SiC, WC, WC-Co, WC-Ni, B4C, TaC, NbC, Cr3C2, HfC, Mo2C, VC, TeC, ZrC, Cr/Si/SiC, CrB2/SiC, Fe3C, Co2C, Ti3AlC2    
Si3N4, AlN, BN, BN/SiC mixture, CrN, HfN, TaN, NbN, ZrN, TiN, VN     
LaF3, CeF3, NdF3, YF3, NaF, KF, BaF2, AlF3, LiF, CaF2, SrF3, SrF2, MgF2     
CoSi2, Mo5Si3, MoSi2, Ta5Si3, TaSi2, TaSi, WSi2, WSi, Nb5Si3, NbSi2, CrSi2, Cr3Si, HfSi2, TiSi2, ZrSi2   
Ti5Si3, ZrSi2, WSi2, VSi2, V3Si, NiSi, YSi2, GeSi, HfSiO4, ZrSiO4     
CdS, ZnS, FeS2, Cu2S, ZnS/Mn, In2S3, Sb2S3, PbS, MoS2, MoS2/Ti, MoS2/Ni, MoS2/W, SnS, SnS2, TaS2, WS2, In2S3, GeS, GeS2, Ag2S, Y2S3     
CdSe, In2Se3, GeSe, GeSe2, GeSe4, GeSe6, CuSe, Cu2Se, SnSe, SeSe2, SiSe, ZnSe, Bi2Se3, WSe2, As2Se3, Ag2Se, MoSe2, HgSe, Sb2Se3  
Zn2SnO4, Cd2SnO4, ZnTe, Bi2Te3, In2Te3, ZnSe, As2Te3, GeAs3Te5, GaAs, InAs     
Ag2Te, Cr2Te3, GeTe, CdTe, InTe, PbTe, Bi2Te3, Ge2Sb2Te5, Cr2Ge2Te6, Fe3GeTe2, MnTe, SiTe, SnTe, WTe2, MgB2, MgB2/Mg, MoTe2, Sb2Te3, AlFe2B2, SeTe, HgTe

3.) Metal sputtering target:     
Magnesium Mg, Calcium Ca, Strontium Sr, Barium Ba
Scandium Sc, Yttrium Y, Lanthanum La, Cerium Ce, Praseodymium Pr, Neodymium Nd, Samarium Sm, Eur Eu, Gadolinium Gd, Terbium Tb, Dysprosium Dy, Holmium Ho, Erbium Er, Thulium Tm, Ytterbium Yb, Lutetium Lu
Titanium Ti, Zirconium Zr, Hafnium Hf, Vanadium V, Niobium Nb, Tantalum Ta, Chromium Cr, Molybdenum Mo, Tungsten W, Manganese Mn, Rhenium Re, 
Iron Fe, Ruthenium Ru, Osmium Os, Cobalt Co, Rhodium Rh, Iridium Ir, Nickel Ni, Palladium Pd, Platinum Pt, 
Copper Cu, Silver Ag, Gold Au,  Zinc Zn, Cadmium Cd
Boron B, Aluminum Al, Indium In, Carbon C, Graphite, Silicon Si, Germanium Ge, Tin Sn, Lead Pb, Antimony Sb, Bismuth Bi, Selenium Se, Tellurium Te

4.) Alloy sputtering target:     
Ag/Al, Ag/Cu, Ag/La, Ag/Lu, Ag/Mg, Al/Ca, Al/Ce, Al/B, Al/Sm, Ag/Sn, Al/Ag, Al/Cr, Al/Cu, Al/Cu/Zn, Al/Zn, Al/Fe, Al/Dy, Al/Tm, Al/Er, Al/Gd, Al/Li, Al/Mg, Li/Mg, Al/Mg/Si, Al/Mn, Al/Ni, Al/Sc, Al/Si, Al/Si/Cu, Al/Si/Y, Al/Sm, Al/Ta, Al/Ti, Al/Ti/Ta, Al/Mo, Al/Nd, Al/V, Al/Y, Al/Yb, Al/W, Al/Cr/Nb/Si/Ti/V, Al/Cr/Mo/Ta/Ti/Zr, Bi/Ag, Bi/Sn, Bi/Pb, Bi/Te/Se/In, Cd/Sn, La/Mn, Ba/Al, Ca/Al, Ce/Ag, Ce/Cu, Ce/Gd, Ce/Sm, Ce/Ti, Co/Al, Co/B, Co/Cr, Co/Cr/Al, Co/Cr/Fe, Co/Fe, Co/Fe/V, Co/Fe/Mn/Si, Co/Fe/Si/B, Co/Fe/B, Co/Fe/Gd, Co/Fe/Cr, Co/Ni/Fe/Cr/Al, Co/Gd, Co/Mn/Si, Co/Ni, Co/Ni/Cr, Co/Nb/Zr, Co/Ti/Sb/Fe, Co/Tb, Co/V, Co/Si, Co/Zr, Co/Zn/Mn, Cr/Al, Cr/B, Cr/Cu, Cr/Mn, Cr/Ni, Cr/Si, Zr/Si, Cr/SiO, Cr/V, Cr/W, Cu/Al, Cu/Ag, Cu/Fe, Cu/Cr, Cu/Al/Ni, Cu/B, Cu/Be, Cu/Ga, Cu/Ge, C/W, C/Ag, Cu/In, Cu/In/Ga/Se, Cu/Zn, Cu/Zn/Al, Cu/Zr/Ti, Cu/Si, Cu/Mo, Cu/Mn/Ti, Cu/Ti, Cu/Ni, Cu/NiO, Cu/Ni/Zn, Cu/Li, Cu/W, Dy/Fe, Dy/Co, Dy/Fe/Co, Fe/Al, Fe/B, Fe/Cr, Fe/Cr/Al, Fe/Co, Fe/Co/B, Fe/Co/Gd, Fe/Gd, Fe/Hf, Fe/Mn, Fe/Ni, Fe/Si, Fe/Si/Al, Fe/Zr, Gd/Ce, Gd/Fe, Gd/Fe/Co, Gd/Er/Si, Gd/Tb, Gd/Ti , Ho/Cu, Hf/Fe, Hf/Zr, Hf/Y, Hf2Al5, HfAl3, In/Sb, In/Sn, In/Zn, Fe/Ge, Pb/Bi, LaB6, La/Al, La/Ni, Mg/Al, Mg/Ca, Mg/Dy, Mg/Gd, Mg/In, Mg/Nd, Mg/Ni, Mg/Nd/Zr/Y, Mg/Sc, Mg/Sm, Mg/Si/Bi, Mg/Y, Mg/Y/Al/Zr, Mg/Zr, Mg/Zn, Mg/Zn/Ca, Mn/Co, Mn/Ga, Mn/Ge, Mn/Co/Ge, Mn/V/Si/Co, Mo/Co/Si, Mn/Al, Mn/Fe, Mn/Ni, Mn/Sn, Mn/Ti/Al, Mo/Na, Mo/Nb, Mo/Cr, Mg2Ni, Ta/Mo, Mo/Si, Nb/Cr/Ti, NbAl3, Nb3Al, Nb2Al, Nb/Si, Nb/Ti, Nb/Zr, Nb/Ta/Ti/V, Nd/Ag, Nd/Fe/B, Ni/Al, Ni/Al/Cr/Hf/Si, Ni/Ce, Ni/La, Ni/Cu, Ni/Cr, Ni/Cr/Al, Ni/Cr/Si, Ni/Ga, Ni/Fe, Ni/Mn, Ni/Ti, Ni/W, Ni/C, Ni/V, Ni/V/Zr, Ni/Yb, Ni2Yb, Ni2MnAl, Co2MnSi, Ni3Yb, Ni3Ti, Ni/Yb, Ni/Zr, Ni/Co, Ni/Re, Ni/Co/Cr/Al/Y/Hf/Si, Sc/Ni, Sc/Zr, Sm/Co, Sm/Fe, Sm2Fe17, Sm/Zr, Sn/Mn, Sn/Sb/Ta, Si/Ti, Ta/Al, Ti/Al, Ti/Ag, Ti/Al/Cr, Ti/Al/Nb, Ti/Al/W, Ti/Al/Cr/Nb, Ti2Al, Ti/Al/Y, Ti/Al/V, Ti/Co, Ti/Hf, Ti/Cr, Ti/Cr/V, Ti/Cr/Mn, Ti/Ni, Ti/Si, Ti/Zr, Ti/Zr/Cr/Mn, Ti/Zr/V, Ti/Pd, Ti/Mo, Ti/Mn, Ti/Mo/Zr/Fe, Ti/V, Ti/V/Cr, Ti/W, Ti2MnAl, Tb/Dy, Tb/Dy/Fe, Tb/Fe, Tb/Fe/Co, Tb/Gd/Fe/Co, Si/Al, Si/Al/W, Si/Cu, Si/Er, SiGe, Si/Ge, Si/Zr, Ge/Si, Ge/Ni/Ti/Cr/Si, V/Al, V/B, V/C, V/Co, V/Cr, V/Cu, V/Fe, V/Mo, V/Ni, V/Ti, V/Ti/Cr, WAl4, Re3Al, W/Cr, W/Ti, W/Si, W/Si/C, W/Ta, Y/Al, Y/Ti, Y/Zr, Y/Zr/Mg, Y/Zr/Si, Cu6Sn5, Cu/Zn/Sn/Se, Zn/Al, Zn/Mg, Zn/Fe, Zn/Fe/Al, Zn/Sn, Zn/Ti, Zn/Al/Mg, Zr2Si, Zr/Al, Zr/Ce, Zr/Co/Ce, Zr/Cu, Zr/Fe, Zr/Cu/Al, Zr/Gd, Zr/Si, Zr/Ti, Zr/Ni, Zr/Y, Zr/Mn/Fe/Al, W/Re, W/Re/HfC, Ti3Al, TiAl3, TiAl6V4, Co2MnGa, In/Sb, Co2MnSi, Nb3Sn, Nb3Ge, Zr2Cu, Zircaloy-4, SmFe11Ti, CeCu6, B/Ni/Co

5.) Thin film photovoltaic coating materials     
Cadmium Sulfide CdS, Copper Sulphide CuS, Cadmium Telluride CdTe, Lead Telluride PbTe, Mercury Telluride HgTe, Indium Telluride In2Te3, Antimony Telluride Sb2Te3, Bismuth Telluride  Bi2Te3, Gallium Telluride Ga2Te3, Tin Telluride SnTe 
Zinc Telluride ZnTe, CuInGaSe, In2Se3, Ga2Se3, CuInSe2, CuInS2, Zinc Stannate (Zn2SnO4), Cadmium Stannate (Cd2SnO4), SnO2, SnCl4, ZnO, Molybdenum, Indium, ZnS, ZnSe, InSb, InAs, In2S3, CuGa, Cu2S, Cu2Se. 
 

Lanthanum Hexaboride (LaB6) products:      
Used as a high brightness thermionic emission materials because of its low work function, high melting point and high metallic conductivity. LaB6 cathode for Leybold 1104 coating machines for precision optical coating is our advantage. 

We produce LaB6 powder, LaB6 disc, LaB6 tablet, LaB6 target, LaB6 rod, LaB6 crucible, LaB6 sector ring, LaB6 tube (hollow cathode), YB6 rod, CeB6, PrB6, NdB6, SmB6, EuB6, GdB6, TbB6, DyB6, HoB6, ErB6, TmB6, YbB6, LuB6, ScB6, (LaBa)B6, (LaEu)B6, CaB6, etc.