MANUFACTURER
NXP Semiconductors
 
PRODUCT CATEGORY
GP BJT
 
DESCRIPTION
Trans GP BJT NPN 80V 1A Automotive 4-Pin(3+Tab) SOT-89 T/R

Implement this NPN BCX56-16,115 GP BJT from NXP Semiconductors to add switching and amplifying capabilities to your electronic circuit design. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 1250 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.

FEATURES
• High current (max. 1 A)
• Low voltage (max. 80 V).
• High current
• Two current gain selections
• High power dissipation capability
 
APPLICATIONS
• Driver stages of audio and video amplifiers.
• Linear voltage regulators
• Low-side switches
• MOSFET drivers

Specifications
EU RoHS Compliant
Type NPN
Number of Elements per Chip 1
Maximum Collector Base Voltage (V) 100
Maximum Emitter Base Voltage (V) 5
Maximum Collector Emitter Voltage (V) 80
Maximum DC Collector Current (A) 1
Maximum Power Dissipation (mW) 1250
Minimum DC Current Gain 100@150mA@2V
Maximum Transition Frequency (MHz) 180(Typ)
Product Category Bipolar Power
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 150
Packaging Tape and Reel
Mounting Surface Mount
Package Height (mm) 1.6(Max)
Package Length (mm) 4.6(Max)
Package Width (mm) 2.6(Max)
PCB changed 3
Tab Tab
Standard Package Name SOT-89
Supplier Package SOT-89
Pin Count 4
Lead Shape Flat