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Category: | Electronics & Electricity / Electronic Components / Integrated Circuit |
Label: | Germanium Oxide GeO2 , transistor MOSFET , field effect |
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Germanium dioxide (GeO2) thin film is used as a gate oxide for high mobility Ge-channel field-effect transistors.
1.) Oxide sputtering target:
CeO2, Nd2O3, Sm2O3, Eu2O3, Gd2O3, Tb4O7, Dy2O3, Ho2O3, Er2O3, Tm2O3, Yb2O3, Lu2O3, Sc2O3, Y2O3, Ta2O5, Ta2Ox, Nb2O5, Nb2Ox Ga2O3, V2O5, VO2, ZrO2 doped with Ti, WO3, WO2.9, HfO2, MgO, Al2O3, In2O3, Indium Tin Oxide, ITO (In2O3-SnO2), In2O3/CaO, ZnO, Al2O3 doped ZnO (AZO), IZO (Indium Zinc Oxide, 90 wt% In2O3 / 10 wt% ZnO), In2O3/CaO ICO, Li2O/ZnO LZO, Ga2O3 doped ZnO (GZO), IGZO, ZnO2/TiO2, ZnO2/ZrO2, ZnO/LiCl, La0.67Sr0.33MnO3 (LSMO), ZrO2-Y2O3 stabilized (YSZ), SnO2, Sb2O3 doped SnO2 (ATO), SnO2/F FTO, ZrO2+Ti, ZrO2+Zr, ZrO2+SiO2, Bi2O3, Cr2O3, MoO, MoO3, NiO, SiO, Cr-SiO, SiO2, TiO, TiO2, VO2, V2O5, TiO2-Nb2O5, Ti2O3, Ti3O5, CuO/Al2O3, Sb2O3, BaO, BaTiO3, CaO, Fe2O3, Fe3O4, PbO, PbTiO3, PbZrO3, LiNbO3, SrO, SrTiO3, SrRuO3, BaTiO3, SrZrO3, BaZrO3, SrBaTiO3, PZT (Plumbum Zirconate Titanate), LaNiO3, InGaZnO, CuInO2, LaAl2O3, CGO, Y3Fe5O12, Tm3Fe5O12, HfO2, ZrO2, LiCoO2, Li3PO4, Cd2SnO4, BiFeO3, Yb2Hf2O7, Yb6HfO11, Yb4Hf3O12, Yb2SiO5 , GeO2
2.) (Boride, Carbide, Nitride, Fluoride, Silicide, Silicate, Sulfide, Telluride, stannate) sputtering target
LaB6, SmB6, GdB6, ZrB2, CrB2, TiB2, HfB2, Mo2B5, TaB2, NbB2, W2B, WB, VB2, TiB, Boron
TiC, SiC, WC, WC-Co, WC-Ni, B4C, TaC, NbC, Cr3C2, HfC, Mo2C, VC, ZrC, Cr/Si/SiC, CrB2/SiC, Fe3C, Co2C
Si3N4, AlN, BN, BN/SiC mixture, CrN, HfN, TaN, NbN, ZrN, TiN, VN
LaF3, CeF3, NdF3, YF3, NaF, KF, BaF2, AlF3, LiF, CaF2, SrF3, SrF2, MgF2
CoSi2, Mo5Si3, MoSi2, Ta5Si3, TaSi2, TaSi, WSi2, WSi, Nb5Si3, NbSi2, CrSi2, Cr3Si, HfSi2, TiSi2, ZrSi2, HfSiO4
Ti5Si3, ZrSi2, WSi2, VSi2, V3Si, NiSi, YSi2, GeSi, HfSiO4, ZrSiO4
CdS, ZnS, Cu2S, ZnS:Mn, In2S3, Sb2S3, PbS, MoS2, MoS2/Ti, MoS2/nI, SnS2, TaS2, WS2, In2S3, GeS2, Ag2S, Y2S3
GeSe, GeSe2, GeSe4, GeSe6, CuSe, Cu2Se, SnSe, SeSe2, ZnSe, Bi2Se3, WSe2, As2Se3
Zn2SnO4, Cd2SnO4, CdTe, ZnTe, Bi2Te3, In2Te3, ZnSe, As2Te3, GeAs3Te5, GaAs, InAs
GeTe, CdTe, PbTe, Bi2Te3, Ge2Sb2Te5
3.) Metal sputtering target:
Silver, Ag, Iridium, Ir, Ruthenium, Ru, Palladium Pd, Lanthanum La, Cerium Ce, Praseodymium Pr, Neodymium Nd, Samarium Sm, Eur , Eu, Gadolinium Gd, Terbium Tb, Dysprosium Dy, Holmium Ho, Erbium Er, Thulium Tm, Ytterbium Yb, Lutetium Lu, Scandium Sc, Yttrium Y, Silicon, Si, Tellurium, Te, Bismuth, Bi, Tin, Sn, Zinc, Zn, Boron, B, Lead, Pb, Antimony, Sb, Chromium, Cr, Cobalt, Co, Aluminum, Al, Nickel, Ni, Titanium, Ti, Tungsten, W, Molybdenum, Mo, Tantalum, Ta, Niobium, Nb, Zirconium, Zr, Hafnium, Hf, Vanadium, V, Germanium, Ge, Indium In, Copper, Cu, Iron, Fe, Manganese, Mn, Magnesium, Mg, Cadmium Cd, etc.
4.) Alloy sputtering target:
Ag-Al, Ag-Cu, Ag-La, Ag-Lu, Ag-Mg, Al-Sm, Ag-Sn, Al-Ag, Al-Cr, Al-Cu, Al-Dy, Al-Er, Al-Gd, Al-Mg, Al-Mg-Si, Al-Sc, Al-Si, Al-Si-Cu, Al-Sm, Al-Ta, Al-Ti, Al-Mo, Al-Nd, Al-V, Al-Y, Al-Yb Cd-Sn, Ce-Ag, Ce-Cu, Ce-Gd, Ce-Sm, Ce-Ti, Co-Al, Co-B, Co-Cr, Co-Cr-Al, Co-Cr-Fe, Co-Fe, Co-Fe-B, Co-Fe-Gd, Co-Gd, Co-Ni, Co-Ni-Cr, Co-Tb, Co-V, Co-Zr, Cr-Al, Cr-B, Cr-Cu, Cr-Mn, Cr-Ni, Cr-Si, Cr-V, Cu-Al, Cu-Ga, Cu-Ge, Cu-In, Cu-Ni, Cu-Zn Dy-Fe, Dy-Co, Dy-Fe-Co, Fe-Al, Fe-B, Fe-Co, Fe-Gd, Fe-Hf, Fe-Mn, Fe-Ni, Fe-Si, Gd-Ce, Gd-Fe, Gd-Fe-Co, Gd-Er-Si, Gd-Tb, Gd-Ti Ho-Cu, Hf-Fe, Hf-Y, In-Sb, In-Sn, In-Zn LaB6, La-Al, La-Ni, Mg-Al, Mg-Ca, Mg-Dy, Mg-Gd, Mg-In, Mg-Nd, Mg-Nd-Zr-Y, Mg-Sc, Mg-Sm, Mg-Y, Mg-Zr, Mn-Fe, Mn-Ni, Mo-Cr Ta-Mo, Mo-Si, Nb-Ti, Nd-Ag, Nd-Fe-B, Ni-Al, Ni-Cu, Ni-Cr, Ni-Cr-Al, Ni-Cr-Si, Ni-Fe, Ni-Mn, Ni-Ti, Ni-W, Ni-V, Ni-V-Zr, Ni-Yb, Ni2Yb, Ni3Yb, Ni-Yb, Ni-Zr Sc-Ni, Sc-Zr, Sm-Co, Sm-Fe, Sm-Zr, Ta-Al, Ti-Al, Ti-Al-Cr, Ti-Al-Y, Ti-Al-V, Ti-Co, Ti-Cr, Ti-Ni, Ti-Si, TiSi2, Ti-Zr, Tb-Dy, Tb-Dy-Fe, Tb-Fe, Tb-Fe-Co, Tb-Gd-Fe-Co V-Al, V-Co, V-Cr, V-Cu, V-Fe, V-Mo, V-Ni, V-Ti, Ti-Al-V, W-Ti, W-Si, Y-Ti, Y-Zr, Y-Zr-Mg Zn-Al, Zr-Al, Zr-Ce, Zr-Cu, Zr-Gd, Zr-Si, Zr-Ti, Zr-Y, W/Re/HfC, TiAl6V4, Co2MnSi, InSb, Co2MnSi, Nb3Sn
5.) Thin film photovoltaic coating materials
Cadmium Sulfide CdS, Copper Sulphide CuS, Cadmium Telluride CdTe, Lead Telluride PbTe, Mercury Telluride HgTe, Indium Telluride In2Te3, Antimony Telluride Sb2Te3, Bismuth Telluride Bi2Te3, Gallium Telluride Ga2Te3, Tin Telluride SnTe Zinc Telluride ZnTe, CuInGaSe, In2Se3, Ga2Se3, CuInSe2, CuInS2, Zinc Stannate (Zn2SnO4), Cadmium Stannate (Cd2SnO4), SnO2, SnCl4, ZnO, Molybdenum, Indium, ZnS, ZnSe, InSb, InAs, In2S3, CuGa, Cu2S, Cu2Se.
Cathay Advanced Materials Limited | |
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Country/Region: | China |
Business Nature: | Manufacturer |
Phone: | +86 752 2627166 |
Contact: | Kevin Mao (Sales Director) |
Last Online: | 10 Dec, 2022 |