Indium (In) 

1,Pure :99.995% - 99.9999%;

2,Technic:Electrolysis-Vacuum smelting：removal of low melting point impurities.(Sn,S,Se,Pb,Cd,As,Hg,P );

3,Analysis :ICP-MS or GDMS （5N:All impurity elements is below 10ppm）

4,Size : ; Ingot ;Granule ,Powder 

5,Service :Supply MSDS ,Free sample; Provide Solutions for Material Application.

6, Physical character: 

Atomic Weight: 114.818

Electronegative: 1.78

Density: ρ=7.31 g/cm3 (0-100℃)

Melting Point: 156.5985 ℃ 

Boiling Point: 2072 ℃ 

7, Specification: 

High Purity Indium: 

In-04 Grade 99.995. The content of Indium is above 99.995%. The total content of Ag, Al, As, Cd, Cu, Fe, Mg, Ni, Pb, S, Si, Sn, Tl, & Zn is bellow 50 ppm; 

In-05 Grade 99.999. The content of Indium is above 99.999%. The total content of Ag, Al, As, Cd, Cu, Fe, Mg, Ni, Pb, S, Si, Sn, Tl, & Zn is bellow 10 ppm; 

Ultra Purity Indium:

In-06 Grade 99.9999. The content of Indium is above 99.9999%. The total content of Cd, Cu, Fe, Mg, Pb, S, Si & Sn is bellow 1 ppm; 

Ultra High Purity Indium:

In-07 Grade 99.99999. The content of Indium is above 99.99999%. The total content of Ag, Cd, Cu, Fe, Mg, Ni, Pb & Zn is bellow 0.1 ppm; 

8, Physical Size: 

bar, Ingot, Granule.

9, Usage: 

It is mainly used in the manufacture of III-V compound semiconductor, high purity alloy, transistor base and as a dopant of Germanium & Silicon single crystal.

10, packing: 

It is packed with Dacron film, then covered with a sealed plastic film bag or vacuum sealed in a glass ampule