Germanium telluride (GeTe) is a phase-change material or chalcogenide that quickly changes its crystalline structure when heated to the material’s transition temperature.

1.) Oxide sputtering target:       
CeO2, Nd2O3, Sm2O3, Eu2O3, Gd2O3, Tb4O7, Dy2O3, Ho2O3, Er2O3, Tm2O3, Yb2O3, Lu2O3, Sc2O3, Y2O3, Ta2O5, Ta2Ox, Nb2O5, Nb2Ox Ga2O3, V2O5, VO2, ZrO2 doped with Ti, WO3, WO2.9, HfO2, MgO, Al2O3, In2O3, Indium Tin Oxide, ITO (In2O3-SnO2), In2O3/CaO, ZnO, Al2O3 doped ZnO (AZO), IZO (Indium Zinc Oxide, 90 wt% In2O3 / 10 wt% ZnO), In2O3/CaO ICO, Li2O/ZnO LZO, Ga2O3 doped ZnO (GZO), IGZO, ZnO2/TiO2, ZnO2/ZrO2, ZnO/LiCl, La0.67Sr0.33MnO3 (LSMO), ZrO2-Y2O3 stabilized (YSZ), SnO2, Sb2O3 doped SnO2 (ATO), SnO2/F FTO, ZrO2+Ti, ZrO2+Zr, ZrO2+SiO2, Bi2O3, Cr2O3, MoO, MoO3, NiO, SiO, Cr-SiO, SiO2, TiO, TiO2, VO2, V2O5, TiO2-Nb2O5, Ti2O3, Ti3O5, CuO/Al2O3, Sb2O3, BaO, BaTiO3, CaO, Fe2O3, Fe3O4, PbO, PbTiO3, PbZrO3, LiNbO3, SrO, SrTiO3, SrRuO3, BaTiO3, SrZrO3, BaZrO3, SrBaTiO3, PZT (Plumbum Zirconate Titanate), LaNiO3, InGaZnO, CuInO2, LaAl2O3, CGO, Y3Fe5O12, Tm3Fe5O12, HfO2, ZrO2, LiCoO2, Li3PO4, Cd2SnO4, BiFeO3       

2.) (Boride, Carbide, Nitride, Fluoride, Silicide, Silicate, Sulfide, Telluride, stannate) sputtering target       
LaB6, SmB6, GdB6, ZrB2, CrB2, TiB2, HfB2, Mo2B5, TaB2, NbB2, W2B, WB, VB2, TiB, Boron       
TiC, SiC, WC, WC-Co, WC-Ni, B4C, TaC, NbC, Cr3C2, HfC, Mo2C, VC, ZrC, Cr/Si/SiC, CrB2/SiC, Fe3C, Co2C       
Si3N4, AlN, BN, BN/SiC mixture, CrN, HfN, TaN, NbN, ZrN, TiN, VN       
LaF3, CeF3, NdF3, YF3, NaF, KF, BaF2, AlF3, LiF, CaF2, SrF3, SrF2, MgF2       
CoSi2, Mo5Si3, MoSi2, Ta5Si3, TaSi2, TaSi, WSi2, WSi, Nb5Si3, NbSi2, CrSi2, Cr3Si, HfSi2, TiSi2, ZrSi2, HfSiO4       
Ti5Si3, ZrSi2, WSi2, VSi2, V3Si, NiSi, YSi2, GeSi, HfSiO4, ZrSiO4       
CdS, ZnS, Cu2S, ZnS:Mn, In2S3, Sb2S3, PbS, MoS2, MoS2/Ti, MoS2/nI, SnS2, TaS2, WS2, In2S3, GeS, GeS2, Ag2S, Y2S3       
GeSe, GeSe2, GeSe4, GeSe6, CuSe, Cu2Se, SnSe, SeSe2, ZnSe, Bi2Se3, WSe2, As2Se3, SiSe     
Zn2SnO4, Cd2SnO4, CdTe, ZnTe, Bi2Te3, In2Te3, ZnSe, As2Te3, GeAs3Te5, GaAs, InAs       
GeTe, CdTe, PbTe, Bi2Te3, SeTe, Ge2Sb2Te5       

3.) Metal sputtering target:       
Silver, Ag, Iridium, Ir, Ruthenium, Ru, Palladium Pd, Lanthanum La, Cerium Ce, Praseodymium Pr, Neodymium Nd, Samarium Sm, Eur , Eu, Gadolinium Gd, Terbium Tb, Dysprosium Dy, Holmium Ho, Erbium Er, Thulium Tm, Ytterbium Yb, Lutetium Lu, Scandium Sc, Yttrium Y, Silicon, Si, Selenium Se, Tellurium, Te, Bismuth, Bi, Tin, Sn, Zinc, Zn, Boron, B, Lead, Pb, Antimony, Sb, Chromium, Cr, Cobalt, Co, Aluminum, Al, Nickel, Ni, Titanium, Ti, Tungsten, W, Molybdenum, Mo, Tantalum, Ta, Niobium, Nb, Zirconium, Zr, Hafnium, Hf, Vanadium, V, Germanium, Ge, Indium In, Copper, Cu, Iron, Fe, Manganese, Mn, Magnesium, Mg, Cadmium Cd, etc.       

4.) Alloy sputtering target:       
Ag-Al, Ag-Cu, Ag-La, Ag-Lu, Ag-Mg, Al-Sm, Ag-Sn, Al-Ag, Al-Cr, Al-Cu, Al-Dy, Al-Er, Al-Gd, Al-Mg, Al-Mg-Si, Al-Sc, Al-Si, Al-Si-Cu, Al-Sm, Al-Ta, Al-Ti, Al-Mo, Al-Nd, Al-V, Al-Y, Al-Yb, Cd-Sn, Ce-Ag, Ce-Cu, Ce-Gd, Ce-Sm, Ce-Ti, Co-Al, Co-B, Co-Cr, Co-Cr-Al, Co-Cr-Fe, Co-Fe, Co-Fe-B, Co-Fe-Gd, Co-Gd, Co-Ni, Co-Ni-Cr, Co-Tb, Co-V, Co-Zr, Cr-Al, Cr-B, Cr-Cu, Cr-Mn, Cr-Ni, Cr-Si, Cr-V, Cu-Al, Cu-Ga, Cu-Ge, Cu-In, Cu-Ni, Cu-Zn, Dy-Fe, Dy-Co, Dy-Fe-Co, Fe-Al, Fe-B, Fe-Co, Fe-Gd, Fe-Hf, Fe-Mn, Fe-Ni, Fe-Si, Gd-Ce, Gd-Fe, Gd-Fe-Co, Gd-Er-Si, Gd-Tb, Gd-Ti, Ho-Cu, Hf-Fe, Hf-Y, In-Sb, In-Sn, In-Zn, LaB6, La-Al, La-Ni, Mg-Al, Mg-Ca, Mg-Dy, Mg-Gd, Mg-In, Mg-Nd, Mg-Nd-Zr-Y, Mg-Sc, Mg-Sm, Mg-Y, Mg-Zr, Mn-Fe, Mn-Ni, Mo-Cr, Ta-Mo, Mo-Si, Nb-Ti, Nd-Ag, Nd-Fe-B, Ni-Al, Ni-Cu, Ni-Cr, Ni-Cr-Al, Ni-Cr-Si, Ni-Fe, Ni-Mn, Ni-Ti, Ni-W, Ni-V, Ni-V-Zr, Ni-Yb, Ni2Yb, Ni3Yb, Ni-Yb, Ni-Zr, Sc-Ni, Sc-Zr, Sm-Co, Sm-Fe, Sm-Zr, Ta-Al, Ti-Al, Ti-Al-Cr, Ti-Al-Y, Ti-Al-V, Ti-Co, Ti-Cr, Ti-Ni, Ti-Si, TiSi2, Ti-Zr, Tb-Dy, Tb-Dy-Fe, Tb-Fe, Tb-Fe-Co, Tb-Gd-Fe-Co, V-Al, V-Co, V-Cr, V-Cu, V-Fe, V-Mo, V-Ni, V-Ti, Ti-Al-V, W-Ti, W-Si, Y-Ti, Y-Zr, Y-Zr-Mg, Zn-Al, Zr-Al, Zr-Ce, Zr-Cu, Zr-Gd, Zr-Si, Zr-Ti, Zr-Y, W/Re/HfC, TiAl6V4, Co2MnSi, InSb, Co2MnSi, Nb3Sn       

5.) Thin film photovoltaic coating materials       
Cadmium Sulfide CdS, Copper Sulphide CuS, Cadmium Telluride CdTe, Lead Telluride PbTe, Mercury Telluride HgTe, Indium Telluride In2Te3, Antimony Telluride Sb2Te3, Bismuth Telluride  Bi2Te3, Gallium Telluride Ga2Te3, Tin Telluride SnTe, Zinc Telluride ZnTe, CuInGaSe, In2Se3, Ga2Se3, CuInSe2, CuInS2, Zinc Stannate (Zn2SnO4), Cadmium Stannate (Cd2SnO4), SnO2, SnCl4, ZnO, Molybdenum, Indium, ZnS, ZnSe, InSb, InAs, In2S3, CuGa, Cu2S, Cu2Se.       

Lanthanum Hexaboride (LaB6) products:        
Used as a high brightness thermionic emission materials because of its low work function, high melting point and high metallic conductivity. LaB6 cathode for Leybold 1104 coating machines for precision optical coating is our advantage.       

We produce LaB6 powder, LaB6 disc, LaB6 tablet, LaB6 target, LaB6 rod, LaB6 crucible, LaB6 sector ring, LaB6 tube (hollow cathode), YB6 rod, CeB6, PrB6, NdB6, SmB6, EuB6, GdB6, TbB6, DyB6, HoB6, ErB6, TmB6, YbB6, LuB6, ScB6, (LaBa)B6, (LaEu)B6, CaB6, etc.

Cadmium Sulfide CdS
Copper Sulphide CuS
Cadmium Telluride CdTe 
Lead Telluride PbTe
Mercury Telluride HgTe
Indium Telluride In2Te3 
Antimony Telluride Sb2Te3
Bismuth Telluride  Bi2Te3
Gallium Telluride Ga2Te3
Tin Telluride SnTe
Zinc Telluride ZnTe 
CuInGaSe 
In2Se3
Ga2Se3
CuInSe2
CuInS2
Zinc Stannate (Zn2SnO4)
Cadmium Stannate (Cd2SnO4)
SnO2
SnCl4 
ZnO
Molybdenum
Indium
ZnS 
ZnSe
InSb
InAs
In2S3
CuGa
Cu2S
Cu2Se