BBO

Model:	thatshigh05
Brand:	Thatshigh
Origin:	Made In China
Category:	Electronics & Electricity / Electronic Components / Other Electronic Components
Label:	BBO Pockels cell , NLO crystal , BBO
Price:	US $200 / pc
Min. Order:	1 pc

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Product Description

THATSHIGH's BBO is featured by　

1.Broad phase matchable range from 409.6 nm to 3500 nm;
2.Wide transmission region from 190 nm to 3500 nm;
3.Large effective second-harmonic-generation (SHG) coefficient about 6 times greater than that of KDP crystal;
4.High damage threshold;
5.High optical homogeneity with dn » 10-6/cm;
6.Wide temperature-bandwidth of about 55°C.

THATSHIGH offers BBO of

1.Strict quality control;
2.Crystal length from 0.02mm to 25mm and size up to 15x15x15 mm3;
3.P-coatings, AR-coatings, mounts and re-polishing services;
4.A large quantity of crystals in stock

THATSHIGH Specifications for BBO Crystal

Dimension Tolerance	(W±0.1mm) ×(H±0.1mm) ×(L+0.5/-0.1mm) (L≥2.5mm) (W±0.1mm) ×(H±0.1mm) ×(L+0.1/-0.1mm) (L<2.5mm)
Angle Tolerance	Δθ ≤ 0.25° Δφ ≤ 0.25°
Clear Aperture	90% of central area
Chamfer	≤ 0.2mm @45°
Chip	≤ 0.1mm
Damage Threshold [GW/cm2 ]	> 1 TEM00, 10ns, 10HZ (uncoated) > 0.5 for 1064nm, TEM00, 10ns, 10HZ (AR-coated) > 0.3 for 532nm, TEM00, 10ns, 10HZ (AR-coated)
Flatness	< λ/8 @ 633nm
Parallelism	< 20"
Perpendicularity	≤ 5'
Surface Quality [S/D]	< 10/5
Wavefront Distortion	< λ/8 @ 633nm
Interior Quality	No visible scattering paths or centers [inspected by 50mW green laser]

Optical and Nonlinear Optical Properties of BBO Crystal

Transparency Range	190nm-3500nm
SHG Phase Matchable Range	409.nm6-350 nm (Type I); 525nm-3500nm (Type II)
Therm-optic Coefficients [K-1]	dno/dT=-16.6×10-6; dne/dT=-9.3×10-6
Absorption Coefficients	<0.1%/cm @1064nm; <1%/cm @532nm
Angle Acceptance	0.8 mrad·cm-1 (θ, Type I, 1064 SHG) 1.27 mrad·cm-1 (θ, Type II, 1064 SHG)
Temperature Acceptance	55 ℃·cm-1
Spectral Acceptance	1.1 nm·cm-1
Walk-off Angle	2.7° (Type I, 1064 SHG); 3.2° (Type II, 1064 SHG)
NLO Coefficients	deff (I)=d31sinθ+(d11cosΦ-d22sin3Φ)cosθ deff (II)=(d11sin3Φ+d22cos3Φ)cos2θ
Non-vanished NLO Susceptibilities	d11=5.8×d36 (KDP); d31=0.05×d11; d22<0.05×d11
Sellmeier Equations (λ in μm )	no2=2.7359+0.01878 / (λ2-0.01822) -0.01354 λ2 ne2=2.3753+0.01224 / (λ2-0.01667) -0.01516 λ2
Electro-optic Coefficients	r22=2.7 pm/V
Half-wave Voltage	7 kV (@1064 nm, 3×3×20 mm3)
Resistivity	>1011 Ω·cm
Relative Dielectric Constant	εs11/εo:6.7; εs33/εo:8.1; Tan δ<0.001