Introduction:

• Wavelengths covering IR, RGB and UV
• Good beam quality and foundational mode with M2 from 1.2 to 2.0
• Air cooling with compact design
• High power stability

Application field:

• Marking, welding, cutting, drilling of metals and nonmetals
• Cutting and marking of wafer
• P1, P2 and P3 scribing in PV solar film manufacture, edge deletion and dot or line etching marking in BIPV
• Rapid prototyping
• Micro-electronics, micro-fabrication and micro-machine

Product feature:

• Air cooling technology with low power consumption
• Original separated design
• Excellent laser beam quality

Technical specifications:
Wavelength: 532nm
Laser type: AO Q switch
Working material: YVO4
Average power:
8 at 10kHz
12 at 15kHz
14 at 20kHz
20 at CW
Beam mode: TEM00
Beam quality: m² <1.5
Divergence angle: 1.5mrad
Spot size at output window: 0.6
Pulse width: 7 to 8 at 10kHz
Repetition frequency: 1 to 100kHz
Power instability: ±1 at 1hr
Pumping source: diode laser
Laser head size: 260 x 130 x 99mm³
Power supply size: 480 x 440 x 180mm³
Cooling: air cooling
Power supply requirement: 220V AC 50 to 60Hz
Peak power: 8kW at 10kHz
Scanning speed: 0 to 7,000mm per second