| Model: | Sic Heater |
|---|---|
| Brand: | Spark |
| Origin: | Made In China |
| Category: | Electronics & Electricity / Other Electrical & Electronic |
| Label: | - |
| Price: |
¥10
/ pc
|
| Min. Order: | 10 pc |
| Last Online:13 Jul, 2024 |
SPK SiC Heating element (Non-standard customization)
Silicon carbide electric heating element is a rod-shaped non-metallic high-temperature electric heating element made of high-quality green silicon carbide as the main raw material after processing, high-temperature silicification and recrystallization. Compared with metal electric heating elements, SiC elements have the characteristics of high service temperature, oxidation resistance, corrosion resistance, long service life, small deformation, and convenient installation and maintenance. Therefore, silicon carbide rods are widely used in various high-temperature electric furnaces and other electric heating equipment in magnetic materials, powder metallurgy, ceramics, glass, metallurgy, machinery and other industries.
Technical Index of Silicon Carbide SiC Heating Elements
|
specific gravity |
2.6~2.8g/cm³ |
bend strength |
>300kg |
|
hardness |
>9 MOH′S |
Tensile strength |
>150kg/cm³ |
|
porosity rate |
<30% |
Radiancy |
0.85 |
The influence to the surface of Silicon Carbide SiC Heating Elements in different Operating Temperature and Surface Load
|
atmosphere |
Furnace Temperature(°C) |
Surface Load(W/cm2) |
The influence on the Rod |
|
Ammonia |
1290 |
3.8 |
The action on SiC produces methane and destroys the protection film of SiO2 |
|
Carbon dioxide |
1450 |
3.1 |
Corrode SiC |
|
Carbon monoxide |
1370 |
3.8 |
Absorb carbon powder and influence the protection film of SiO2 |
|
Halogen |
704 |
3.8 |
Corrode SiC and destroy the protection film of SiO2 |
|
Hydrogen |
1290 |
3.1 |
The action on SiC produces methane and destroys the protection film of SiO2 |
|
Nitrogen |
1370 |
3.1 |
The action on SiC produces insulating layer of silicon nitride |
|
Sodium |
1310 |
3.8 |
Corrode SiC |
|
silicon dioxide |
1310 |
3.8 |
Corrode SiC |
|
Oxygen |
1310 |
3.8 |
SiC oxidized |
|
Water-vapor |
1090-1370 |
3.1-3.6 |
The action on SiC produces hydrate of silicon |
|
Hydrocarbon |
1370 |
3.1 |
Absorb carbon powder resulted in Hot pollution |
