Item

                  Spec

Crystal structure

Mono-crystalline

Crystal method

CZ

Conductance Type

P

Dopant

B

dimension

 125*125±0.4

 125*125±0.4

 Diameter

 Φ150±0.4

 Φ165±0.4

Wafer thickness range

190/200±20μm

190/200±20μm

Crystal orientation

<100>±1

<100>±1

Resistivity( Ω.cm)

1-3/3-6

1-3/3-6

Lifetime( μs)

 ≥15

 ≥15

Carbon concentration( atoms/cm3 )

≤5*1016

≤5*1016

Oxygen concentration( atoms/cm3 )

≤0.95*1018

≤0.95*1018

Etching Pit( pcs/cm3 )

≤2000

≤2000

TTV

≤30μm

≤30μm

Camber

≤30μm

≤30μm

Saw mark

≤15μm(depth)

≤15μm(depth)

Wafer surface

No crack, obvious pits, surface clean, no abnormal spots no pinholes.

Gap

 No

Edge defect

Edge defect width≤0.2mm,extention≤0.5mm with total quantity≤2,,distance≥30mm

Luminance edge

Length≤1/2 of wafer dimension, width≤1/3 of wafer thickness