Item Spec
Crystal structure Mono-crystalline
Crystal method CZ
Conductance Type P
Dopant B
dimension 156*156±0.4
Diameter Φ200±0.4
Wafer thickness range 200±10μm
Crystal orientation <100>±1
Resistivity( Ω.cm) 1-3/3-6
Lifetime( μs) ≥15
Carbon
concentration( atoms/cm3 )
≤5*1016
Oxygen
concentration( atoms/cm3 )
≤0.95*1018
Etching Pit( pcs/cm3 ) ≤2000
TTV ≤25μm
Camber ≤30μm
Saw mark ≤15μm(depth)
Wafer surface No crack, obvious pits, surface clean, no
abnormal spots no pinholes.
Gap No
Edge defect Edge defect width≤0.2mm,extention ≤0.5mm
with total quantity≤2,,distance≥30mm
Luminance edge Length≤1/2 of wafer dimension, width≤
1/3 of wafer thickness