POWER-SEM
Single IGBT Driver
1DI 825
single high-power IGBT driver core
Features
● ASIC single IGBT Driver Core
● Suitable for all IGBTs up to 1200V/1700V
● Short circuit and over current protection by
VCEsat monitoring
● Independent monitoring of each IGBT VCEsat
protection (T)
● Isolation due to nanometer amorphous transformer
● Supply undervoltage protection (<12.5V)
● Error memory
● Error “soft turn-off”
● Turn-off spike restrain by “dynamic soft
turnoff”
● Internal isolated DC/DC power supply
● ±32A peak current output
● IGBT gate drive voltage+15V/-9V
● 650ns signal conversion time
● 110ns error signal feedback time
● 400ns narrow pulse inhibit eliminate radio
frequency interference
● Max. working frequency 100kHz
● error synchronization function, low level
effectively
● Clearance distance from primary side to
secondary side is 42mm
Typical Applications
● Single or bridge circuit
● Inverter
● Welding machine
● Induction heating
● Converter
● High power UPS
● High power high frequency SMPS