POWER-SEM
Dual IGBT Driver
2DI 615
2DI 615T (SMT)
Dual high power IGBT driver core
Features
● ASIC dual IGBT driver
● Suitable for all IGBTs up to 600V/1200V/1700V
● H a l f - b r i d g e mo d e s e l e c t , a l s o two
independent single drives
● Short circuit and over current protection by
VCEsat monitoring
● Isolation due to nanometer amorphous
transforme
● Supply undervoltage protection (<12.5V)
● Error memory
● Top/Bot interlock in half-bridge mode
● Dead time adjustable
● Internal isolated DC/DC power supply
● ±15A peak current output
● IGBT gate drive voltage+15V/-9V
● 300ns signal conversion time
● 110ns error signal feedback time
● 100ns narrow pulse inhibit eliminate radio
frequency interference
● Max. working frequency 100kHz
● Error chain function, low level active
● Clearance distance from primary side to
secondary side is 39mm
● Provide SMT model, suitable for large scale
production
Typical Applications
● Single or bridge circuit
● Inverter
● Welding machine
● Induction heating
● Converter
● High power UPS
● High power high frequency SMPS