Purpose:

This device is used in the semiconductor chip production process to achieve vacuum annealing, vacuum alloying, vacuum crystallization and other processes in a controllable magnetic field. The system has precise magnetic field strength and temperature control system and high vacuum system.

Main technical parameters:

◆ Structural type: horizontal hot wall type

Working temperature range: 500 degrees, 700 degrees, 1100 degrees.

◆ Constant temperature zone length and accuracy: ± 0.5 ℃/800mm

Gas flow rate setting accuracy: ± 1% F S

Air tightness of the pneumatic system: 1 × 10-7pa.m3/s

Process uniformity: ≤± 5%

Control mode: Industrial microcomputer control

Vacuum degree: 5 * 10-4 Pa

◆ Record the number of process curves and steps without restriction