Purpose:

This equipment is used for high-temperature diffusion, sintering, annealing and other processes in semiconductor production processes. The system has a precise instrument control system and a high-purity gas path system with high sealing and corrosion resistance. This device is mainly suitable for processing 8-inch process silicon wafers.

Structural form: Vertical

Operating temperature: 1200 ℃

Constant temperature zone: 750mm

Temperature control accuracy: ± 2 ℃