crystal growth furnace

crystal growth furnace
Model:-
Brand:XABDS
Origin:Made In China
Category:Industrial Supplies / Metallurgy Machinery
Label:induction furnace , melting furance , crystal furnace
Price: US $1 / set
Min. Order:1 set
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Product Description

AE-6000C-type flexible shaft crystal growth furnace is to melt silicon semiconductor materials by graphite resistance heater in an inert gas environment, Using czochralski Technique dislocation-free crystal growth equipment, it can produce high quality single crystal which for solar photovoltaic devices.                            
                            Main technical parameters
Properties
Model
AE-85
AE-95
AE-120
Diameter of Growth Tank (mm)
850
950
1200
Ingot diameter (inch)
6 - 8
8 - 10
8-16
Silica crucible size (inch)
18-20
22-24
24-28
Max charge amount (Kg)
95
150
260
Max crystal length (mm)
2000
2000
2000
Seed pulling rate(mm/Hr)
0-508
0-508 
0-508
Seed Jog Speed (mm/Min)
0-508 
0-508 
0-508
Seed rotation rate (rpm)
0-40 
0-40
0-40
Crucible Elevate Rate (mm/Hr)
0-128
0-128 
0-128
Crucible Jog Speed (mm/Min)
0-50.8 
0-50.8 
0-50.8
Crucible rotation rate (rpm)
0-20 
0-20
0-20
Crucible Travel stroke (mm)
400
420
480
Maximum weight for 
crucible support (Kg)
165
230
450
Main line pump rate (SL/Sec)
70
70
150
Auxiliary pump rate (SL/Sec)
8
8
8
Ultimate pressure (Pa)
less than
less than 4
less than 4
Permissible leak rate (Pa/Hr)
less than 6
less than 6
less than 6
Gas flow control range (SL/Min)
4-200
4-200
4-200
Working pressure range (Pa)
1500-5000 
1500-5000
1500-5000
AC power input (3 phase, 380V)
140 KW
200 KW
250 KW
Number of Heating Elements
1
2
2
Magnetic Coil
Optional
Optional
Optional
                           Main technical parameters
Properties
Model
AE-85
AE-95
AE-120
Diameter of Growth Tank (mm)
850
950
1200
Ingot diameter (inch)
6 - 8
8 - 10
8-16
Silica crucible size (inch)
18-20
22-24
24-28
Max charge amount (Kg)
95
150
260
Max crystal length (mm)
2000
2000
2000
Seed pulling ratemm/Hr
0-508
0-508 
0-508
Seed Jog Speed (mm/Min)
0-508 
0-508 
0-508
Seed rotation rate (rpm)
0-40 
0-40
0-40
Crucible Elevate Rate (mm/Hr)
0-128
0-128 
0-128
Crucible Jog Speed (mm/Min)
0-50.8 
0-50.8 
0-50.8
Crucible rotation rate (rpm)
0-20 
0-20
0-20
Crucible Travel stroke (mm)
400
420
480
Maximum weight for 
crucible support (Kg)
165
230
450
Main line pump rate (SL/Sec)
70
70
150
Auxiliary pump rate (SL/Sec)
8
8
8
Ultimate pressure (Pa)
less than
less than 4
less than 4
Permissible leak rate (Pa/Hr)
less than 6
less than 6
less than 6
Gas flow control range (SL/Min)
4-200
4-200
4-200
Working pressure range (Pa)
1500-5000 
1500-5000
1500-5000
AC power input (3 phase, 380V)
140 KW
200 KW
250 KW
Number of Heating Elements
1
2
2
Magnetic Coil
Optional
Optional
Optional
AE-6000C-type flexible shaft crystal growth furnace is to melt silicon semiconductor materials by graphite resistance heater in an inert gas environment, Using czochralski Technique dislocation-free crystal growth equipment, it can produce high quality single crystal which for solar photovoltaic devices.
crystal growth furnace 1crystal growth furnace 2crystal growth furnace 3

Member Information

Xi’an Abundance Electric Technology Co.,Ltd.
Country/Region:Shaan Xi - China
Business Nature:Manufacturer
Phone:89388771
Contact:Queena Liu (sales assistant)
Last Online:21 Dec, 2012