Purpose:

Mainly used for teaching and experimental work on high-temperature diffusion, oxidation (wet oxygen), annealing, and sintering alloy processes for semiconductor 6-inch and below silicon wafers in major universities, silicon material laboratories, and microelectronics majors.

1.1 Working temperature: 400-1300 ℃

1.2. Length and accuracy of constant temperature zone: 300mm/± 0.5 ℃ (optional)

1.3. Number of furnace tubes: 1, 2, 3, 4 tubes (optional)

1.4. Compatible with silicon wafer size: 6 inches and downward compatible

1.5. Delivery and pickup methods: automatic or manual (optional)