1. Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary,
planar stripe,DMOS technology. This advanced technology has been especially tailored to minimize on-state 
resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and 
commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode 
power supply
2. Features 
> Features
> 38.4A, 300V, RDS(Qfl) = O.085Q @VGS = 10 V
> Low gate charge (typical 90 nO)
> Low Crss (typical 70 pF)
> Fast switching
> 100% avalanche tested
> Improved dv/dt capability
https://www.utsource.net/ic-datasheet/FQA38N30-1525001.html