1.Description
This device is a N-channel Power MOSFETs made using the second generation of MDmesh? technology.This revolutionary transistor associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
2.Features
> Trench gate and thin wafer technology (G6H-II series)
> High speed switching: tr = 80 ns typ., tf = 150 ns typ.
> Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ.
> Low leak current: ICES = 1 A max. 
https://www.utsource.net/ic-datasheet/RJP30H1DPD-1880399.html