1.Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior 
switching performance,and withstand high energy pulse in the avalanche and commutation mode. These devices are well 
suited for high efficient switched mode power supplies and active power factor Correction
2.Features
> 5A, 500V, RDS(on) = 1.5Ω @VGS = 10 V
> Low gate charge ( typical 12.8 nC)
> Low Crss ( typical 9 pF)
> Fast switching
> 100% avalanche tested
> Improved dv/dt capability
https://www.utsource.net/ic-datasheet/FDPF7N50U-1832078.html