1. Description
Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and r edized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of Applications.
2.  Features 
> Advanced Process Technology
> Ultra Low On-Resistance
> Dynamic dv/dt Rating
> 175°C Operating Temperature
> Fast Switching
> Fully Avalanche Rated
https://www.utsource.net/ic-datasheet/IRF3205-1230861.html