1. Description
Item Symbol Ratings Unit Collector to emitter voltage VCES 360 V Gate to emitter voltage VGES ±30 V Collector current Ic 35 A Collector peak current ic(peak) Note1 200 A Collector dissipation PC Note2 25 W Junction to case thermal impedance θj-c 5 °C/ W Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C
2.  Features 
> Trench gate technology (G5H series)
> Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ
> High speed switching tf = 150 ns typ
> Low leak current ICES = 1 μA max 
https://www.utsource.net/ic-datasheet/RJP30E2600V-1903989.html