SOI鍵合EVG®810 LT+EVG®301 (中國上海市貿易商) - 其它電力、電子

SOI鍵合EVG®810 LT+EVG®301

EVG®810 LT

Features

Surface plasma activation for low-temperature bonding (fusion/molecular and intermediate layer bonding)
Fastest kinetics of any wafer bonding mechanism
No wet processes required
Highest bond strength at low temperature annealing (up to 400 °C)
Applicable for SOI, MEMS, compound semiconductors, and advanced substrates bonding
High degree of materials compatibility (including CMOS)

Technical Data

Wafer diameter (substrate size)
50 - 200, 100 - 300 mm

LowTemp™ plasma activation chamber
Process gases: 2 standard process gases (N2 and O2)
Universal mass flow controller: self-calibrating (up to 20.000 sccm)
Vacuum system: 9x10-2 mbar
Opening / closing of chamber: automated
Loading / unloading of chamber: manual (wafer / substrate placed on loading pins)

Optional features
Chuck for different wafer sizes
Metal ion-free activation
Additional process gases with gas mixing
High vacuum system with turbo pump: 9x10-3 mbar base pressure

Material systems that are qualified with LowTemp™ plasma activated bonding

Si: Si/Si, Si/Si (thermally oxidized, Si (thermally oxidized)/Si (thermally oxidized)

TEOS/TEOS (thermally oxidized)

Si/Ge for Germanium-on-Insulator (GeOI)

Si/Si3N4

Glass (borofloat, non-alkali): Si/Glas, Glass/Glass

Compound semiconductors: GaAs, GaP, InP

Polymers: PMMA, Cyclo Olefin Polymers

"Best Known Method" recipes available for users for the above and for other materials (full list available on request)

EVG®301

Features

High-efficiency cleaning using 1 MHz megasonic nozzles or area transducers (option)
Brush scrubbing for single-side cleaning (option)
Diluted chemicals for wafer cleaning
Prevents cross-contamination from back to front side
Fully software controlled cleaning process
Options
- Pre-bonding station with IR-inspection
- Tooling for non-SEMI standard substrates

echnical Data

Wafer diameter (substrate size)
200, 100 - 300 mm

Cleaning system
Open chamber, spinner and cleaning arm
Chamber: made of PP or PFA (option)
Cleaning media: DI-water (standard), other cleaning media (option)
Spinner chuck: vacuum chuck (standard) and edge handling chuck (option) made of metal ion free and clean materials
Rotation: up to 3000 rpm (in 5 sec)

Megasonic nozzle
Frequency: 1 MHz (3 MHz option)
Output power: 30 - 60 W
DI-water flow rate: up to 1.5 liter/min
Effective cleaning area: Ø 4.0 mm
Material: PTFE

Megasonic area transducer
Frequency: 1 MHz (3 MHz option)
Output power: max. 2.5 W/cm² active areas (max. output 200 W)
DI-water flow rate: up to 1.5 liter/min
Effective cleaning area: triangle shape that guarantees radio uniformity on whole wafers per each rotation
Material: SS and sapphire