1、Brief Introduction to IGZO:
IGZO in IGZO targets stands for Indium Gallium Zinc Oxide, which is an amorphous oxide semiconductor material composed of indium (In), gallium (Ga), zinc (Zn), and oxygen (O). As a new type of oxide active layer material, IGZO targets play a crucial role in the fabrication of high-performance TFT (Thin Film Transistor) devices. Its unique material properties and extensive application advantages have made it a shining star in the field of semiconductor materials. Our company specializes in research and development as well as production, creating industry-leading products. Our company produces the following oxide target materials:

OXIDES
Aluminum Oxide (Al2O3) Magnesium Oxide (MgO)
Antimony Oxide (Sb2O3) Zirconium-Magnesium Oxide (ZrMgO3)
Barium Titanate (BaTiO3) Magnesium-Zirconium Oxide (MgZrO3)
Bismuth Oxide (Bi2O3) Molybdenum Oxide (MoO3)
Bismuth Titanate (Bi2Ti4O11) Nickel-Chrome Oxide (CrNiO4)
Cerium Oxide (CeO2) Nickel-Cobalt Oxide (NiCoO2)
Cobalt-Chrome Oxide (CoCr2O4) Niobium Pentoxide (Nb2O5)
Chromium Oxide (Cr2O3) Rare Earth Garnets A3B2(SiO4)3
Chromium Oxide (Eu doped) Rare Earth Oxides (La2O3)
Gallium Oxide (Ga2O3) Silicon Dioxide (SiO2)
Germanium Oxide (GeO3) Silicon Monoxide (SiO)
Hafnium Oxide (HfO2) Tantalum Pentoxide (Ta2O5)
Indium Oxide (In2O3) Tin Oxide (SnO2)
Indium-Tin Oxide (ITO) Titanium Dioxide (TiO2)
Iron Oxide (Fe2O3) Tungsten Oxide (WO3)
Lanthanum Oxide (La2O3) Yttrium Oxide (Y2O3)
Lead Titanate (PbTiO3) Yttrium-Aluminum Oxide (Y3Al5O12)
Lead Zirconate (ZrPbO3) Zinc Oxide (ZnO)
Lithium Niobate (LiNbO3) Zinc Oxide/Aluminum Oxide (Al2O3)
Lithium-Cobalt Oxide (CoLiO2) Zirconium Oxide (ZrO2)

2、Material Properties:
The purity of IGZO targets typically reaches 99.99% (i.e., 4N+), meaning that the internal impurity content is extremely low, thus ensuring the high quality and stability of the material. High purity is the foundation for the application of IGZO targets in high-performance electronic devices, as it guarantees the reliability and long lifespan of the devices. Additionally, IGZO targets have a relatively high density, generally not less than 6.30g/cm³, which provides good compactness and structural stability during the preparation process. As for the melting point, the individual oxide components in IGZO targets have different melting points, but overall, IGZO materials exhibit high thermal stability and can withstand high temperatures without significant structural changes.

3、Industry Applications:

IGZO materials demonstrate a series of significant application advantages in the semiconductor industry. Firstly, IGZO has excellent electron mobility, with its carrier mobility being 20-30 times that of amorphous silicon. This characteristic enables IGZO to achieve faster signal transmission speeds and higher working efficiencies when fabricating high-performance TFT devices. Secondly, IGZO has low energy consumption and short response times, making it uniquely advantageous in the field of display drivers. Whether for LCD or OLED display drivers, IGZO provides outstanding display performance and energy efficiency ratios. Furthermore, IGZO exhibits good flexibility and can be applied in the preparation of flexible displays, offering more possibilities for future wearable devices and portable electronic products.

In the field of display driver applications, IGZO targets have been developed and brought to market by renowned companies such as Sharp, Samsung, and LG. Display panels driven by IGZO TFTs have been widely used in products like laptops, gaming laptops, and tablets. For example, Dell's XPS 13 laptop, Razer's Blade 14 gaming laptop, and Apple's iPad mini 2 and iPad Air all adopt IGZO technology. These products have won widespread praise from consumers for their outstanding display performance and energy efficiency ratios.

Besides the field of display drivers, IGZO targets also show great potential in sensing applications and brain-like systems. In sensing applications, IGZO can serve as a material for photodetectors, pressure sensors, pH sensors, gas sensors, and flexible sensors, providing high-performance sensing elements for fields such as the Internet of Things and smart homes. In brain-like systems, IGZO can be used as the channel material for DRAM, RRAM, and other memristors, offering new solutions for neuromorphic computing and artificial intelligence.

Moreover, there are various methods for preparing IGZO targets, with magnetron sputtering and atomic layer chemical vapor deposition (ALCVD) being commonly used in large-scale manufacturing at present. These methods can precisely control the element ratio and oxygen content of IGZO targets, thereby optimizing their electrical properties and stability. By adjusting the element ratio of IGZO and the oxygen content during the film formation process, the characteristics of the active layer can be further enhanced, ensuring production efficiency while improving device stability.

In summary, as a material with unique characteristics, IGZO targets exhibit broad application prospects and enormous market potential in the semiconductor industry. With continuous technological advancements and market expansion, IGZO targets are expected to achieve breakthroughs and innovations in more fields, making greater contributions to technological progress and industrial development in human society.